You are here
APPLIED OPTOELECTRONICS, INC.
UEI: N/A
# of Employees: 15
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
-
Growth of the large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetectors array on GaAs compliant substrate
Amount: $749,587.00N/A
SBIRPhase II2000Department of Defense Missile Defense Agency -
N/A
Amount: $64,983.00N/A
SBIRPhase I2000Department of Defense Missile Defense Agency -
N/A
Amount: $64,993.00N/A
SBIRPhase I2000Department of Defense Missile Defense Agency -
N/A
Amount: $64,993.00N/A
SBIRPhase I2000Department of Defense Missile Defense Agency -
N/A
Amount: $399,614.00N/A
SBIRPhase II1999National Science Foundation -
InAs/InGaSb Type-II Superlattice for Mid-IR Photodetectors
Amount: $99,919.00N/A
SBIRPhase I1999Department of Defense Air Force -
Growth of the large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetectors array on GaAs compliant substrate
Amount: $64,966.00N/A
SBIRPhase I1999Department of Defense Missile Defense Agency -
Electrically Pumped Type-II Quantum Well Lasers at 4um
Amount: $732,298.00We will develop high-temperature high-power mid-infrared (2-5 micron) diodes based on InAs/InGaSb/InAlSb type-II quantum wells. In pulse mode operation, we will investigate the pulse-to-pulse reprodu ...
SBIRPhase II1998Department of Defense Air Force -
Multi-color Quantum Cascade Mid-Infrared Sources at 2.5 to 5 ym
Amount: $64,612.00We propose to develop multi-color mid-infrared (IR) sources at 2.5 to 5 um based on InAs/InGaSb type-II quantum cascade (QC) structures. A compact mid-IR dual wavelength source could be extremely usef ...
SBIRPhase I1998Department of Defense Missile Defense Agency -
SBIR Phase I: Type-II Mid-Infrared Lasers Grown on Compliant Universal Substrates
Amount: $99,405.00N/A
SBIRPhase I1998National Science Foundation
