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BRIMROSE CORPORATION OF AMERICA

Company Information
Address
19 LOVETON CIR
SPARKS GLENCOE, MD 21152-9201
United States


http://www.brimrose.com

Information

UEI: RCTEHJQGAXH4

# of Employees: 43


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Low Temperature Homo and Hetero-Epitaxial Growth of SiC on 4H-C and Hexagonal Nb2C Substrates by Plasma

    Amount: $100,000.00

    Brimrose Corporation's Phase I technical objective is to optimize the Brimrose Corporation's `ECR' Plasma Enhanced CVD processing method for growing homoepitaxially high quality SiC layers on semi-ins ...

    SBIRPhase I1998Department of Defense Air Force
  2. Optical Power Limiters

    Amount: $750,000.00

    Brimrose proposes to produce an improved material for optical power l miting at near infrared wavelengths to protect sensors against jamming and to build a prototype device. The proposed material, van ...

    SBIRPhase II1997Department of Defense Missile Defense Agency
  3. Crosswind and Range Measurement Lidar for Sniper's Sights

    Amount: $750,000.00

    Crosswind influences the accuracy of sharpshooting at short, medium and large ranges. At large shooting ranges, crosswind becomes the largest component in the error budget of sniper weapons. The cro ...

    SBIRPhase II1997Department of Defense Special Operations Command
  4. Transition Metal Doped II-VI Ternary Semi-Conductors: Development of a New Class of Materials for Superior Optical Power Limiting in the Wavelength

    Amount: $750,000.00

    Brimrose proposes to develop a relatively new class of materials to build electro-optic power limiter (EOPL) to protect optical sensors against jamming and for personnel protection against laser beams ...

    SBIRPhase II1997Department of Defense Air Force
  5. Novel Photorefractive Time-Integrating Detector for the Radar Signal Processing

    Amount: $60,000.00

    Using newly developed II-VI photorefractive semiconductors as time integrator and high performance TeO2 acousto optic deflectors (AODs), Brimrose proposes to develop a compact RF signal processor usef ...

    SBIRPhase I1997Department of Defense Missile Defense Agency
  6. Transition Metal Doped II-VI Ternary Semi-Conductors: Development of a New Class of Materials for Superior Optical Power Limiting in the Wavelength

    Amount: $80,000.00

    N/A

    SBIRPhase I1997Department of Defense Air Force
  7. Crosswind and Range Measurement Lidar for Sniper's Sights

    Amount: $99,999.00

    N/A

    SBIRPhase I1997Department of Defense Special Operations Command
  8. A Vanadium Doped ZnTe, A New Material For Real-Time Optical Signal Processing: Crystal Growth and Optical Characterization

    Amount: $705,214.00

    This proposal deals with the growth of a relatively new class of photorefractive semiconductor, Vanadium Doped ZnTe, which has fast response at relatively low intensity and high sensitivity required f ...

    SBIRPhase II1996Department of Defense Air Force
  9. A Solid-State, Electronically Tunable, Narrow Bandpass IR Filter Based on Electro-Acousto-Optic Fabry-Perot (EAOFP)

    Amount: $711,182.00

    Brimrose will research and build in this SBIR Phase I program, a monolithic integrated electronically tunable IR filter for middle atmosphere temperature profiling and high resolution spectroscopy. Th ...

    SBIRPhase II1996Department of Defense Air Force
  10. Infrared Detectors Using Mercury Manganese Telluride

    Amount: $60,000.00

    In the proposed research we will investigate methods for improving the performance of very long wavelength infrared (VLWIR) photovoltaic detectors fabricated from Hg1-xMnxTe. This material was chosen ...

    SBIRPhase I1996Department of Defense Missile Defense Agency
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