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Sensor Electronic Technology, Inc.
UEI: ZLAMG4KBKN15
# of Employees: 82
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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SBIR Phase II: High Power Deep UV LED-Based Lamps
Amount: $499,704.00This Small Business Innovation Research (SBIR) Phase II project will result in solid-state high power UV LED based lamps for use in water/air/food sterilization/purification, bio-aerosol detection, bi ...
SBIRPhase II2006National Science Foundation -
MEMOCVD Growth of AlGaN Heterojunctions for Advanced UV Photodetectors
Amount: $69,953.00Sensor Electronic Technology, Inc. (SET) proposes to develop ultraviolet detectors for focal plane arrays based on wide-bandgap semiconductor materials. Direct gap III?N AlInGaN materials are the onl ...
SBIRPhase I2006National Aeronautics and Space Administration -
Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices
Amount: $99,815.00GaN-based electronic and optoelectronic devices have demonstrated superior properties for applications involving visible and ultraviolet light emitting diodes (LEDs), laser diodes, and high-power elec ...
STTRPhase I2006Department of Defense Army -
SBIR Phase I: Growth of Bulk AlGaN Substrates Using a Modified Hydride Vapor Phase Epitaxy (HVPE) Reactor
Amount: $99,962.00This Small Business Innovation Research (SBIR) Phase I project will develop bulk AlGaN substrates for advanced III-Nitride based semiconductor devices. The substrates will be grown by a modified hydri ...
SBIRPhase I2006National Science Foundation -
SBIR Phase I: UV LED Based Water/Wastewater Point-of-Use Purification System
Amount: $99,976.00This Small Business Innovation Research (SBIR) Phase I project proposes to develop ultraviolet light emitting diode (LED) based point-of-use water and wastewater sterilization reactors. UV radiation h ...
SBIRPhase I2006National Science Foundation -
Large Periphery AllnGaN-Gan MOSHFET Device For High Power X-Band Microwave Amplifiers
Amount: $908,800.00We propose to develop submicron gate large periphery AllnGaN-Gan based metal-oxide semiconductor heterojunction field-effect transistors (MOSHFET) as a building block for high-power (>20W), high frequ ...
SBIRPhase II2005Department of Defense Missile Defense Agency -
InGaN-Channel Heterostructure Field Effect Transistor With Double Recessed Gate for Improved RF Performance
Amount: $119,959.00We propose a new approach for fabrication of reliable, high breakdown voltage InGaN-channel transistors for next generation radars and communications systems. Double recessed gate design enabled to i ...
SBIRPhase I2005Department of Defense Army -
High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer
Amount: $0.00Sensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the r ...
SBIRPhase I2005Department of Defense Defense Advanced Research Projects Agency -
High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer
Amount: $749,919.00Sensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the r ...
SBIRPhase II2005Department of Defense Defense Advanced Research Projects Agency -
SBIR PHASE I: High Power Deep UV LED-Based Lamps
Amount: $99,904.00This Small Business Innovation Research Phase I research project aims to develop high power UV LED based lamps for use in water/air/food sterilization/purification, bio-aerosol detection, and laborato ...
SBIRPhase I2005National Science Foundation