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TRACE ELEMENT CHARCTERIZATION IN III-V COMPOUNDS BY SPUTTER INITIATED RESONANCE…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
3712
Program Year/Program:
1987 / SBIR
Agency Tracking Number:
3712
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ATOM SCIENCES, INC.
ATOM SCIENCES, INC. 114 RIDGEWAY CTR OAK RIDGE, TN 37830 8810
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1987
Title: TRACE ELEMENT CHARCTERIZATION IN III-V COMPOUNDS BY SPUTTER INITIATED RESONANCE IONIZATION SPECTROSCOPY
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $167,585.00
 

Abstract:

THE VLSI AND VHISC DEVELOPMENT PROGRAMS OF THE AIR FORCE REQUIRE CHARACTERIZATION OF III-V COMPOUNDS WITH AN INTERFERENCE FREE, HIGHLY SENSITIVE ELEMENT ANALYSIS TECHNIQUE HAVING GOOD LATERAL AND DEPTH RESOLUTION. SPUTTER INITIATED RESONANCE IONIZATION SPECTROSCOPY (SIRIS), AN ULTRASENSITIVE ANALYTICAL TECHNIQUE DEVELOPED BY ATOM SCIENCES, HAS BEEN DEMONSTRATED IN SILICON TO HAVE GOOD SENSITIVITY AND BE INTERFERENCE FREE. DETECTION LIMITS OF 2 PPB (1X10 TO THE 14TH POWER/CM3) HAVE BEEN SHOWN FOR GALLIUM IN BULK SILICON. THE LATERAL AND DEPTH RESOLUTION OF THE PRESENT APPARATUS ARE NOT ADEQUATE FOR THE PRESENT AND FUTURE NEEDS OF THE SEMICONDUCTOR INDUSTRY. LATERAL RESOLUTION OF 100 TO 5 MICRONS ARE NECESSARY. RESOLUTIONS INTO THE SUBMICRON RANGE WILL BE REQUIRED IN THE FUTURE. WE PROPOSE TO DETERMINE THE FEASIBILITY OF USING THE SIRIS TECHNIQUE AND APPARATUS WILL BE TESTED FOR IMPROVED SENSITIVITY AND LATERAL RESOLUTION. THE FEASIBILITY FOR IMPROVING LATERAL RESOLUTION TO 5 MICRONS IN PHSE II OF THE PROPOSED PROGRAM WILL BE DETERMINED.

Principal Investigator:

Dr James E Parks
6154831113

Business Contact:

Small Business Information at Submission:

Atom Sciences Inc.
114 Ridgeway Ctr Oak Ridge, TN 37830

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No