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AlInN/GaN HFET over Free-Standing bulk GaN substrates

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
94835
Program Year/Program:
2010 / STTR
Agency Tracking Number:
B09B-001-0056
Solicitation Year:
N/A
Solicitation Topic Code:
MDA 09T001
Solicitation Number:
N/A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2010
Title: AlInN/GaN HFET over Free-Standing bulk GaN substrates
Agency / Branch: DOD / MDA
Contract: HQ0006-10-C-7402
Award Amount: $99,963.00
 

Abstract:

SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial growth on native substrate and the use of AlInN/GaN lattice-matched structure will reduce the defects density by 2-3 orders of magnitude, resulting in RF devices with high reliability. Furthermore, it will lead to an increased electron concentration at the heterointerface, making the depletion extensions shorter and thus improving the cut-off frequency power trade off.

Principal Investigator:

Jinwei Yang
Chief Scientist
8036479757
jinwei@s-et.com

Business Contact:

Remis Gaska
President and CEO
8036479757
gaska@s-et.com
Small Business Information at Submission:

Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Rensselaer Polytechnic Institute
110 8th Street
Troy, NY 12180
Contact: Michael Shur
Contact Phone: 5182762201