AlInN/GaN heterostructures for X-band RF power amplification

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 91554	Program Year/Program: 2010 / SBIR
Agency Tracking Number: B083-024-0520	Solicitation Year: N/A	Solicitation Topic Code: MDA 08-024	Solicitation Number: N/A

Small Business Information: Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC -
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 2: Fiscal Year: 2010

Title: AlInN/GaN heterostructures for X-band RF power amplification

Agency / Branch: DOD / MDA

Contract: W9113M-10-C-0077

Award Amount: $749,823.00

Abstract:
SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. In Phase I, we successfully demonstrated MEMOCVDr growth of AlInN/GaN structures with Ga-free AlInN, the record sheet electron concentration and the record-breaking HFETs with peak drain currents exceeding 2 A/mm and ft and fmax above 100 GHz. Phase II program will focus on the optimization and scaleup of the growth technology. We will also demonstrate MOSHFET with current density higher than 2.5A/mm and cutoff frequency over 150GHz.

Principal Investigator:
Jinwei Yang
Chief Scientist
8036479757
jinwei@s-et.com

Business Contact:
Remis Gaska
President and CEO
8036479757
gaska@s-et.com

Small Business Information at Submission:

Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209

EIN/Tax ID: 141812556

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No