High-Temperature Low-Loss III-Nitride MOSHFET RF Limiter
Agency / Branch:
DOD / NAVY
We propose to develop a compact solid-state RF power limiter using III-Nitride technology fully compatible with that of other III-Nitride RF components (power amplifiers, RF switches etc.) The proposed limiter is based on the SET Inc. proprietary insulated gate device (MOSHFET) design and technology. Using recent achievements in the epilayer growth, contact formation and active region design, the proposed limiter will achieve a very low insertion loss (0.1- 1dB, depending on the required protection power), low noise, high maximum operating temperatures, between 300oC and 600oC or even higher, and high protection and maximum (breakdown limited) powers, well exceeding +60 dBm. The proposed technology is also capable to providing limiters with low protection powers, in the range of 15 to 30 dBm.
Small Business Information at Submission:
Sensor Electronic Technology, Inc.
1195 Atlas Road Columbia, SC 29209
Number of Employees: