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Company Information:

Company Name:
Aymont Technology, Inc.
Address:
30 Saratoga Avenue, Suite 6H
Ballston Spa, NY 12020 1217
Phone:
(518) 810-3294
URL:
N/A
EIN:
205843362
DUNS:
625950055
Number of Employees:
2
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $539,964.00 5
SBIR Phase II $600,000.00 1

Award List:

GaP Avalanche Photodiodes for Radiation Detection

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
DHS
Principal Investigator:
Larry B. Rowland, President
Abstract:
In this Phase I DHS STTR proposal submitted in response to Topic H-SB06.2-007, Aymont Technology, Inc. and University of Virginia will develop gallium phosphide (GaP) avalanche photodiodes (APD) with high quantum efficiency (QE>50% at 360 nm in Phase I), high gain (>100000), and high speed (2 GHz… More

SBIR Phase I: A-Plane Silicon Carbide Wafers

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovative Research Phase I project aims to investigate the feasibility of producing low-defect-density wafers of a-axis oriented SiC. Aymont will grow boules of SiC in the a-axis direction by physical vapor transport (PVT) to produce these wafers. When available, wafers are… More

SiC Avalanche Photodiodes and Arrays

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,999.00
Agency:
NASA
Principal Investigator:
Larry Rowland, Principal Investigator
Abstract:
Aymont Technology, Inc. (Aymont) will demonstrate the feasibility of SiC p-i-n avalanche photodiodes (APD) arrays. Aymont will demonstrate 4 x 4 arrays of 2 mm2 APDs for visible-blind high-sensitivity UV detection. These arrays will exhibit high gain (10^6), high quantum efficiency (peak < 50%),… More

Novel Silicon Carbide Avalanche Photodiodes

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$100,000.00
Agency:
DOE
Principal Investigator:
Abstract:
This project will demonstrate novel SiC avalanche photodiodes (APD) to replace photomultiplier tubes for gamma detection, a technology used in nuclear physics experiments. These avalanche photodiodes will enhance the sensitivity, resolution, and robustness of gamma detection at a reduced cost. The… More

SiC Avalanche Photodiodes and Arrays

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$600,000.00
Agency:
NASA
Principal Investigator:
Larry Rowland, Principal Investigator
Abstract:
In this Phase 2 SBIR program submitted to National Aeronautics and Space Administration (NASA) in response to Topic S1.05 (Detector Technologies for UV, X-Ray, Gamma-Ray and Cosmic-Ray Instruments), Aymont Technology, Inc. (Aymont) and GE Global Research will enable high-sensitivity ultraviolet… More

Silicon Carbide Avalanche Photodiodes for Single-photon Direct Detection of Lyman-alpha Radiation

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$89,965.00
Agency / Branch:
DOC / NIST
Principal Investigator:
Abstract:
In the proposed Phase I SBIR program, Aymont Technology and CoolCAD Electronics will design and demonstrate prototype silicon carbide (SiC) avalanche photodiodes (APD) specifically designed for high-efficiency, single-photon counting of 121.6 nm Lyman-alpha photons. This detector will be provided to… More