Contamination-free, Ultra-rapid Reactive Chemical Mechanical Polishing (RCMP) of GaN substrates
Agency / Branch:
DOD / MDA
Gallium Nitride (GaN) substrates are ideal materials for fabrication of high-power and high-frequency devices based on III-V materials. The current state-of-the-art Chemical Mechanical Polishing (CMP) methods are plagued by several challenges, including, surface charge affects due to surface contamination, and sub-surface damages, which can limit the quality of III-V devices. Furthermore, there is a need to enhance polishing rates to increase throughput and decrease manufacturing costs. Sinmat Inc., in collaboration with University of Florida proposes to develop a surface contamination-free, Ultra-rapid Reactive Chemical Mechanical Polishing (RCMP) process for the production of epi-ready GaN substrates. This process also facilitates removal of surface/ sub-surface damage that can be detrimental to epitaxial growth. In Phase I we plan to demonstrate the feasibility of this RCMP process for polishing GaN substrates, whereas in Phase II high performance electronic devices will be fabricated on such GaN substrates.
Small Business Information at Submission:
Rajiv K. Singh
Professor of Mat. Sc. & Eng.
Research Institution Information:
2153 Hawthorne Road GTEC Center, Suite 129, Box2 Gainesville, FL 32641
Number of Employees:
University of Florida
Material Science & Engineering
PO Box 116400
Gainesville, FL 32611
Rajiv K. Singh