Fiscal Year:
2010
Title:
Contamination-free, Ultra-rapid Reactive Chemical Mechanical Polishing (RCMP) of GaN substrates
Agency / Branch:
DOD / MDA
Contract:
HQ0006-10-C-7396
Award Amount:
$100,000.00
Abstract:
Gallium Nitride (GaN) substrates are ideal materials for fabrication of high-power and high-frequency devices based on III-V materials. The current state-of-the-art Chemical Mechanical Polishing (CMP) methods are plagued by several challenges, including, surface charge affects due to surface contamination, and sub-surface damages, which can limit the quality of III-V devices. Furthermore, there is a need to enhance polishing rates to increase throughput and decrease manufacturing costs. Sinmat Inc., in collaboration with University of Florida proposes to develop a surface contamination-free, Ultra-rapid Reactive Chemical Mechanical Polishing (RCMP) process for the production of epi-ready GaN substrates. This process also facilitates removal of surface/ sub-surface damage that can be detrimental to epitaxial growth. In Phase I we plan to demonstrate the feasibility of this RCMP process for polishing GaN substrates, whereas in Phase II high performance electronic devices will be fabricated on such GaN substrates.
Principal Investigator:
Rajiv K. Singh
Professor of Mat. Sc. & Eng.
3522467420
rsing@mse.ufl.edu
Small Business Information at Submission:
Sinmat Inc
2153 Hawthorne Road GTEC Center, Suite 129, Box2 Gainesville, FL 32641
EIN/Tax ID:
593645729
DUNS:
N/A
Number of Employees:
Woman-Owned:
No
Minority-Owned:
No
HUBZone-Owned:
No
Research Institution Information:
University of Florida
Material Science & Engineering
PO Box 116400
Gainesville, FL 32611
Contact:
Rajiv K. Singh
Contact Phone:
3522467420