SOI MESFETs for Ultra-Low Power Electronic Circuits
Agency / Branch:
DOD / DARPA
Voltage compliant metal-semiconductor field-effect-transistors (MESFETs) provide solutions to critical problems arising from the reduced operating voltage of highly scaled CMOS. This Phase 2 activity will develop MESFET based circuitries that allow high voltage applications to coexist on future, highly scaled low voltage CMOS applications. Our patented MESFET technology will be used to develop both RF and DC applications with a focus on RF power conversion, DC power management and driver applications. Our first objective is to develop high efficiency power amplifiers (PAs) for ultra-low power RF transceivers. As the supply voltage is reduced, resistive losses in the power amplifier limit its overall RF power conversion efficiency. Phase 2 will demonstrate a fully integrated PA module for system-on-a-chip transceiver applications that take advantage of the MESFETs high voltage capability to eliminate these problems. The second objective is to demonstrate low dropout (LDO) linear regulators for RF transceivers. The MESFET LDOs will have greater load stability, smaller silicon area and faster settling time compared to existing p-channel CMOS designs. We shall partner with Honeywell and Jazz Semiconductor during Phase 2 to demonstrate the MESFET circuits using advanced SOI CMOS technologies. These collaborations will be further developed for Phase 3 Commercialization activities.
Small Business Information at Submission:
Research Institution Information:
SJT MICROPOWER INC
16411 N SKYRIDGE LN FOUNTAIN HILLS, AZ 85268-
Number of Employees:
Arizona State University
Sponsored Projects Admin.
PO Box 873503
Tempe, AZ 85287-