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Company Information:

Company Name: BANDGAP TECHNOLOGIES, INC.
City: Columbia
State: SC
Zip+4: 29201
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (803) 765-9321

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $465,002.00 7
SBIR Phase II $3,444,441.00 4

Award List:

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Yuri Khlebnikov, President
Award Amount: $65,000.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Yuri Khlebnikov, President
Award Amount: $65,000.00

A Novel Approach for the Growth of Semi-Insulating Silicon Carbide

Award Year / Program / Phase: 2001 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Yuri Khlebnikov, President
Award Amount: $700,000.00
Abstract:
The development of a process to produce semi-insulating (SI) silicon carbide (SiC) boules with improved yields will significantly reduce the cost of wafers and thus accelerate the rapid commercialization of SI SiC for microwave and RF system applications.The objective of this Phase II project is to… More

Growth of Large Diameter Silicon Carbide Boules

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Yuri Khlebnikov, President
Award Amount: $65,000.00
Abstract:
Absence of low defect density large diameter (~100mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC based devices. This phase I program is aimed at demonstrating a novel technique that will significantly reduce themechanical stress in SiC during boule growth. … More

Off c-Axis Bulk Crystal Growth of Silicon Carbide

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Yuri Khlebnikov, President
Award Amount: $65,002.00
Abstract:
This Phase I program is aimed at demonstrating the principle of off c-axis boule growth of 4H-SiC. In Phase I, using off-axis SiC seeds, we will demonstrate the growth of 4H-n SiC boules~15 mm long. Also in Phase I, we will slice the off-axis boules intowafers, lap and polish them, and perform… More

A New Approach for the Growth of High Resistivity Silicon Carbide

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Yuri Khlebnikov, President
Award Amount: $65,000.00
Abstract:
This Phase I program is aimed at demonstrating a novel SiC source material synthesis technique that will be used to grow high resistivity SiC. In this effort, we will demonstrate that the proposed source material synthesis technique will produce SiCstarting material that is far superior to… More

Development of an Isotropic Etching Method of Surface Preparation of SiC

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Peter Muzykov, Scientist
Award Amount: $70,000.00
Abstract:
"This Phase I SBIR program is aimed at demonstrating the principle of an approach for the surface preparation of SiC wafers comparable or superior to chemo-mechanical polishing. In the Phase I program, surface preparation of 4H-SiC wafers 50 mm (2 inches)in diameter will be demonstrated. Also in… More

An Approach for the Growth of Long Silicon Carbide Boules

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Georgiy Stratiy, Engineer
Award Amount: $70,000.00
Abstract:
"This Phase I program is aimed at demonstrating the principle of an approach for the growth of 4H-SiC boules 50 mm in diameter but of length equal to 50 mm, which is approximately twice the length of boules grown by convential approaches. Also in Phase I,the grown boules will be sliced into wafers,… More

Off c-Axis Bulk Crystal Growth of Silicon Carbide

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Yuri Khlebnikov, President
Award Amount: $999,998.00
Abstract:
The development of a process to produce bulk silicon carbide (SiC) boules with alternate crystallographic orientations, specifically the a-orientation, which is perpendicular to the normally-grown c-orientation crystal, offers significant improvements inthe SiC semiconductor electronic properties. … More

Growth of Large Diameter Silicon Carbide Boules

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Yuri I. Khlebnikov, President
Award Amount: $750,000.00
Abstract:
Absence of low defect density large diameter (~100 mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC-based devices. Hence, the development of a process to produce large diameter bulk SiC boules with low defectdensity offers a significant impetus for the… More

Silicon Carbide Bulk Crystal Growth at High Growth Rates

Award Year / Program / Phase: 2005 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Yuri Khlebnikov, President
Award Amount: $994,443.00
Abstract:
The development of a process to produce low defect density silicon carbide (SiC) boules at high growth rates will significantly reduce the cost of wafers and thus accelerate the rapid commercialization of SiC for high power and high temperature device applications. The objectives of this Phase II… More