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SBIR Phase I: Ion implantation-free SiC device fabrication technology based on…

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
90972
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
0839748
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
BarSiC Semiconductors, LLC
209 Brook Ave Starkville, MS 39759 4359
View profile »
Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: SBIR Phase I: Ion implantation-free SiC device fabrication technology based on low-temperature selective epitaxial growth
Agency: NSF
Contract: 0839748
Award Amount: $99,996.00
 

Abstract:

This Small Business Innovative Research Phase I project aims at developing new semiconductor device processing technology for SiC electronics. The new method is based on low-temperature selective epitaxial growth of SiC (LTSEG) of SiC. The technology promises high values of doping, especially for p-type doping that is problematic in SiC. Another advantage is the development of a self-aligned fabrication technique for the emerging market of SiC power integrated circuits. Self-aligned device fabrication for SiC is in the embryonic stage. Efforts to develop new fabrication technologies in Japan and Europe are growing, which may put the U.S. SiC industry significantly behind in developing cost-efficient SiC electronics. In this respect, the novel device fabrication method offers a possibility of strong competitive advantage.

Principal Investigator:

Galyna Melnychuk
MS
6623239854
galyna@barsicsemi.com

Business Contact:

Galyna Melnychuk
MS
6623239854
galyna@barsicsemi.com
Small Business Information at Submission:

BarSiC Semiconductors, LLC
209 Brook Ave Starkville, MS 39759

EIN/Tax ID: 203613966
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No