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III-nitride 1.5 Micron Photonic Devices on Si Substrates

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
94897
Program Year/Program:
2010 / STTR
Agency Tracking Number:
A10A-015-0010
Solicitation Year:
N/A
Solicitation Topic Code:
ARMY 10T015
Solicitation Number:
N/A
Small Business Information
III-N TECHNOLOGY, INC.
4627 5th Street Lubbock, TX 79416 4727
View profile »
Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2010
Title: III-nitride 1.5 Micron Photonic Devices on Si Substrates
Agency / Branch: DOD / ARMY
Contract: W911NF-10-C-0073
Award Amount: $100,000.00
 

Abstract:

Research in silicon photonics has received much attention in recent years for its potential to utilize well developed silicon processing technology. A broad range of linear and nonlinear silicon photonic devices such as modulators, splitters, switches and detectors have been demonstrated. However, the most important challenge in silicon photonics thus far is the difficulty of making electrically pumped light sources and amplifiers. The objective of this project is to develop new types of optical emitters and amplifiers on silicon. The proposed approach is to utilize epitaxial growth of III-nitride semiconductors on Si substrate with in-situ erbium (Er) doping by metal-organic chemical vapor deposition (MOCVD). The approach is based on successful synthesizing of III-nitride UV/visible photonic structures on Si and Er-doped III-nitride photonic structures, achieved jointly by III-N Technology, Inc and Texas Tech University. These photonic structures predominantly exhibited the desired optical emission for optical communication at 1.5 micron. The technical aims are to (a) Further develop MOCVD growth technology for obtaining device quality InGaN on Si; (b) Optimize in-situ Er incorporation into III-nitride device structures; (c) Develop device fabrication technology for the realization of Er-doped nitride optical amplifiers and emitters active at 1.5 micron.

Principal Investigator:

Jing Li
R & D Director
8064019289
jingli@3n-tech.com

Business Contact:

Jingyu Lin
Co-Founder
8064414570
jylin@3n-tech.com
Small Business Information at Submission:

III-N Technology, Inc.
4627 5th Street Lubbock, TX 79416

EIN/Tax ID: 481240178
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Texas Tech University
Office of Research Services
203 Holden Hall
Lubbock, TX 79409
Contact: Kathleen Harris
Contact Phone: 8067423884