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GROWTH AND CHARACTERIZATION OF CD(1-X)ZN(X)TE SINGLE CRYSTALS

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
5605
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
5605
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Brimrose Corporation of America
19 Loveton Circle Hunt Valley Loveton Center Sparks, MD 21152-9201
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1989
Title: GROWTH AND CHARACTERIZATION OF CD(1-X)ZN(X)TE SINGLE CRYSTALS
Agency / Branch: DOD / ARMY
Contract: N/A
Award Amount: $313,504.00
 

Abstract:

MERCURY CADMIUM TELLURIDE (MCT) HAS EMERGED AS THE SUPERIOR MATERIAL FOR INFRARED APPLICATIONS IN IMPORTANT 3-5 MICROMETER AND 8-13 MICROMETER RANGES CORRESPONDING TO ATMOSPHERIC WINDOWS. BULK GROWTH METHODS CANNOT PROVIDE DEVICE GRADE LARGE AREA CRYSTALS OF THIS MATERIAL. HENCE, IN ORDER TO REALIZE THE STATE-OF-THE-ART LARGE AREA DEVICES, EPITAXIAL GROWTH IS THE ONLY PLAUSIBLE TECHNIQUE AT THE PRESENT. FOR PRODUCING DEVICE GRADE EPITAXIAL ALYERS, GOOD QUALITY SUBSTRATES IS THE ESSENTIAL REQUIREMENT. CDTE IS THE COMMONLY USED SUBSTRATE MATERIAL FOR MCT EPITAXY. IT IS EXTREMELY DIFFICULT TO GROW LARGE, TWIN FREE CDTE CRYSTALS WITH LOW DISLOCATION DENSITY. THE ALTERNATIVE SUBSTRATE MATERIAL IS CD(1-X)ZN(X)TE WHICH CAN BE GROWN WITH BETTER CRYSTALLOGRAPHIC PERFECTION. HOWEVER, GROWTH OF COMPOSITIONALLY UNIFORM CRYSTAL IS VERY DIFFICULT DUE TO METALLURGICAL NATURE OF CD(1-X)ZN(X)TE. IN THIS PROPOSAL A TECHNIQUE TO GROW LARGE,SUBSTRATE QUALITY CRYSTAL OF CD(1-X)ZN(X)TE USING ZONE LEVELING/ MELTING IS SUGGETED. THE GROWTH SYSTEM HAS A VERTICAL CONFIGURATION. GROWTH AMPOULE HAS PRACTICALLY NO FREE VOLUME OVER THE STOICHIOMETRIC CHARGE WHICH IS IN FORM OF SOLID INGOT. THIS WILL PREVENT FORMATION OF VOIDS AND LOSS OF MATERIAL BY SUBLIMATION/EVAPORATION DURING THE GROWTH PROCESS. MULTIPLE ZONE LEVELING PASSES WILL HOMOGENIZE THE COMPOSITION OVER THE ENTIRE INGOT AND A FINAL ZONE MELTING PASS WITH PREDETERMINED SPEED WILL GROW THE SINGLE CRYSTAL. THESE CRYSTALS WILLBE COMPLETELY CHARACTERIZED WITH RESPECT TO MICRO-STRUCTURE USING MICROSCOPIC AND ADVANCED X-RAY DIFFRACTION TECHNIQUES AND ELECTRICAL CHARACTERIZATION WILL BE CARRIED OUT USING HALL MEASUREMENTS AND PHOTOLUMINESCENCE SPECTROSCOPY. FROM THE CORRELATION BETWEEN GROWTH CONDITIONS AND CRYSTAL QUALITY, TECHNIQUE TO GROW DEVICE GRADE CRYSTALS WILL BE DEVELOPED.

Principal Investigator:

Dr S B Trivedi
3016685800

Business Contact:

Small Business Information at Submission:

Brimrose Corp. Of America
7720 Belair Rd Baltimore, MD 21236

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No