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Pseudomorphic HEMT MMlC's By OrganometaIIic Vapor Phase Epitaxy

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
19959
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
19959
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Brimrose Corporation of America
19 Loveton Circle Hunt Valley Loveton Center Sparks, MD 21152-9201
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1993
Title: Pseudomorphic HEMT MMlC's By OrganometaIIic Vapor Phase Epitaxy
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $54,000.00
 

Abstract:

Brimrose Corporation, Phase I objective is to use the in house developed "multipolar" low temperature/low energy, mixed, ion beam assisted MOCVD process and to demonstrate that pseudomorphic HEMT structures, comparable in quality to MBE material, can be grown at low substrate temperatures. Samples will be analyzed and provided to Air Force for further evaluation. Phase II objectives are to optimize the process and grow a pseudomorphic HEMT structure. The HEMT circuit will be fabricated, tested, and compared in performance with similar devices fabricated with MBE grown material.

Principal Investigator:

Dr. G.v. Jagannathan
4109317200

Business Contact:

Small Business Information at Submission:

Brimrose Corp Of America
5020 Campbell Boulevard, Suite E Baltimore, MD 21236

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No