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InP Solar Cell on Porous Silicon for Improved Solar Energy Conversion

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
31968
Program Year/Program:
1996 / SBIR
Agency Tracking Number:
31968
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Brimrose Corporation of America
19 Loveton Circle Hunt Valley Loveton Center Sparks, MD 21152-9201
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1996
Title: InP Solar Cell on Porous Silicon for Improved Solar Energy Conversion
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $60,000.00
 

Abstract:

Brimrose Corporation has developed a novel low-temperature and low energy ion-beam assisted growth process for minimizing the problems and improving the quality of the hetero epitaxial films of III-V compound semiconductors on foreign substrates such as silicon, germanium, etc. The improvement in the quality of hetero epitaxial InP/Si films will be achieved by using this novel low temperature growth technique in conjunction with the surface modified silicon substrate. Briefly porous silicon substrate and Brimrose Corporation's low energy hydrogen beam assisted low temperature growth process will be used to improve the InP epitaxial films quality and thereby the solar energy conversion efficiency. Phase I technical objective is to demonstrate that InP epilayer grown on porous silicon substrates will have substantially improved material characteristics than the InP epilayers grown by state of the art MBE and MOCVD growth processes. An InP solar cell on porous silicon will be fabricated, tested and a sample will be provided to BMDO. Phase II objective, initially, is to optimize the process, improve the material properties. During Phase II Brimrose will back coat the InP/porous silicon solar cell with epitaxial GaSb and boost the solar cell efficiency to above 30-35%. The attractive features of this growth technique will be the low V/III ratio, efficient usage of costly metalorganics, improved material properties, high yield, low cost, very thin SLS layers that may need to filter out dislocations due to the use of porous silicon substrates and low temperatures involved.

Principal Investigator:

G.v. Jagannathan
4106685800

Business Contact:

Small Business Information at Submission:

Brimrose Corp Of America
5020 Campbell Blvd., Suite E Baltimore, MD 21236

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No