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AlxGa(1-x)N Solar Blind Detector Material Device Structure Growth & Evaluation

Award Information

Department of Defense
Missile Defense Agency
Award ID:
Program Year/Program:
1996 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Brimrose Corporation of America
19 Loveton Circle Hunt Valley Loveton Center Sparks, MD 21152-9201
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 1996
Title: AlxGa(1-x)N Solar Blind Detector Material Device Structure Growth & Evaluation
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $60,000.00


Phase I technical objectives of Brimrose Corporation are two fold. They are: 1) Epitaxial growth of AlxGa1-xN solar blind detector material device structure on new lattice and thermal matched substrates and evaluation of the material properties. The film growth will be carried out in Brimrose Corporation's 'Novel' ECR MOMBE Reactor using rare earth permanent magnets; 2) Preliminary epitaxial growth studies of these substrates as thin films on porous silicon for use as compliant substrate for large area growth of III-V nitrides. Subsequent Phase II objective is to optimize the growth of solar blind detector structure on both single crystal substrates as well as on thin films of these substrate material grown on porous silicon bulk substrate. Detectors will be fabricated and tested. At the end of Phase I samples of III-V nitride detector material grown on these substrates will be provided to BMDO along with the final report.

Principal Investigator:

G.v. Jagannathan

Business Contact:

Small Business Information at Submission:

Brimrose Corp Of America
5020 Campbell Blvd., Suite E Baltimore, MD 21236

Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No