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Low Temperature Homo and Hetero-Epitaxial Growth of SiC on 4H-C and Hexagonal…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
40975
Program Year/Program:
1998 / SBIR
Agency Tracking Number:
40975
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Brimrose Corporation of America
19 Loveton Circle Hunt Valley Loveton Center Sparks, MD 21152-9201
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1998
Title: Low Temperature Homo and Hetero-Epitaxial Growth of SiC on 4H-C and Hexagonal Nb2C Substrates by Plasma
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $100,000.00
 

Abstract:

Brimrose Corporation's Phase I technical objective is to optimize the Brimrose Corporation's `ECR' Plasma Enhanced CVD processing method for growing homoepitaxially high quality SiC layers on semi-insulating 4H-SiC and heteroepitaxially on closely lattice matched and highly conducting Nb2C substrates (advantageous for fabricating vertical SiC power devices). Lowering of growth temperature will be achieved by using thermally less stable Disilane, injected down stream, and using thermally less stable and reactive alkene precursor/s such as acetylene or ethylene or propylene in the form of a Argon + alkene plasma mixture generated upstream in the CVD Reactor. Preliminary doping studies using dimethyl Aluminum Hydride and Tertiarybutyl Phosphine will be carried out. Phase II will involve optimization of n- and p-type doping, growth and full characterization of material device structures of interest to the Air Force and modeling of plasma enhanced CVD growth for single and multiwafer processing. Samples of doped and undoped epitaxial SiC films grown on 4H-SiC and Nb2C substrates and fully characterized will be delivered to the Air Force at the end of Phase I research.

Principal Investigator:

Dr. G.v. Jagannathan
4106685800

Business Contact:


0
Small Business Information at Submission:

BRIMROSE CORP. OF AMERICA
5024 Campbell Blvd Baltimore, MD 21236

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No