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Nanostructures for dislocation blocking in infrared detectors: Dislocation…

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
83228
Program Year/Program:
2008 / STTR
Agency Tracking Number:
A074-006-0257
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Brimrose Corporation of America
19 Loveton Circle Hunt Valley Loveton Center Sparks, MD 21152-9201
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2008
Title: Nanostructures for dislocation blocking in infrared detectors: Dislocation Reduction In Infrared Detector Materials Grown on Si Substrates Using Nan
Agency / Branch: DOD / ARMY
Contract: W911NF-08-C-0071
Award Amount: $749,995.00
 

Abstract:

Large format, low cost, reliable and high performance infrared focal plane arrays are essential for the Army's Third Generation IR Imaging Technology. HgCdTe (MCT) detectors fabricated on silicon substrates are an attractive alternative generating considerable interest. State of the art technology produces CdTe buffer and MCT epitaxial layers with dislocation densities of 5x105 and 106-107/cm2 respectively on silicon substrates. In Phase I we investigated the use of a CdTe nanocrystalline buffer layer to reduce the dislocation density. The presence or the incomplete removal of SiO2 on the substrate surface posed severe problems in achieving dislocation density reduction. To overcome this problem we will use germanium coated silicon and patterned Ge/Si substrates since GeOx is much more volatile than SiOx. These substrates will be spin-coated with CdTe nanocrystals (by low cost colloidal synthesis) followed by heat treatment and epitaxial over layer growth of CdTe and MCT layers. The result will be CdTe/Ge/Si compliant substrates having dislocation density of 105/cm2 or less. These substrates will be used for the deposition of MCT device layers and fabrication of IR detectors. High quality CdTe/Ge/Si compliant substrates with low dislocation density, device quality MCT layers and fabricated MCT-IR detectors will be provided to ARL.

Principal Investigator:

G. V. Jagannathan
P.I./Sr. Scientist
4106685800
gnathan@brimrose.com

Business Contact:

Diane C. Murray
Contract Coordinator
9365886901
dibrim@aol.com
Small Business Information at Submission:

BRIMROSE CORP.OF AMERICA
19 Loveton Circle Hunt Valley Loveton Center Sparks, MD 21152

EIN/Tax ID: 521210230
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
RENSSLAER POLYTECHNIC INSTITUTE
110 8th Street
403 West Hall
Troy, NY 12180 3590
Contact: Ishwara Bhat
Contact Phone: (518) 276-2786
RI Type: Nonprofit college or university