GaAs-Based MOSFET Employing Epitaxial A12O3
Agency / Branch:
DOD / USAF
In Phase I of this Small Business Innovation Research program we propose to fabricate a GaAs based metal-oxide-semiconductor field effect ransistor (MOSFET) employing epitaxilly deposited Al2O3 as the insulating material.The Al2O3 will be grown by gas source molecular beam epitaxy, synthesized from an elemental aluminum cell and an N2O gas source. The epitaxial method of deposition provides a one-step fabrication technique for synthesis of the transistor structures.The resulting Al2O3/GaAs heterostructures will be characterized by a variety of techniques including X-ray diffraction, Rutherford back-scattering spectroscopy, Auger electron spectroscopy, Hall effect measurements, I-V and C-V measurements. The characterization will assess the crystalline integrity of the semiconductor and oxide layers and heterostructures, and in particular their electrical properties.The Phase I results will be used to assess the potential of aluminum oxide for III-V transistor applications. If successful, a III-V CMOS device will be produced in Phase II.
Small Business Information at Submission:
Principal Investigator:J. Monheiser
Busek Co., Inc.
11 Tech Circle Natick, MA 17601
Number of Employees: