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Development for Radiation Hardened Advanced Electronic Circuits

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
94850
Program Year/Program:
2010 / STTR
Agency Tracking Number:
B09B-006-0053
Solicitation Year:
N/A
Solicitation Topic Code:
MDA 09T006
Solicitation Number:
N/A
Small Business Information
United Silicon Carbide, Inc
7 Deer Park Drive, Suite E Monmouth Junction, NJ 08852-1921
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2010
Title: Development for Radiation Hardened Advanced Electronic Circuits
Agency / Branch: DOD / MDA
Contract: HQ0006-10-C-7403
Award Amount: $99,980.00
 

Abstract:

In response to SBIR topic MDA09-T006, USCI proposes to develop the first medium-level integrated circuit for radiation-tolerant applications. The advanced integrated circuit will be demonstrated based on a novel yet simple design SiC transistor that has the potential to provide a factor of 10X improvement in performance comparison to state-of-the-art. The SiC transistor can be fabricated by a substantially simplified processing technology that has been developed in-house. Phase I will be focused on the radiation-tolerant design of all critical device components, all subcircuit blocks and the final complete integration of the circuit. A large number of design paramters will be studied and optimized including the transistor radiation tolerance, switching speed, conduction loss, blocking voltage, overall efficiency and temperature dependence. Phase II will be focused on (i) the fabrication of multiple batches of the critical device components, subcircuit blocks and the completely integrated circuits, (ii) the electrical and thermal characterization of all components, subcircuit blocks and the entire IC, and (iii) the evaluation of radiation tolerance of the key device components, subcircuit blocks and the complete ICs. Phase III will be focused on improving manufacturing yield and packaging of the IC for prototype system demonstration.

Principal Investigator:

Larry X. Li
Sr. Engineer
7325659500
unitedsic@unitedsic.com

Business Contact:

Maurice Weiner
Vice President
7325659500
uscweiner@unitedsic.com
Small Business Information at Submission:

United Silicon Carbide, Inc
New Brunswick Technology Center 100 Jersey Ave.Building A New Brunswick, NJ 08901

EIN/Tax ID: 223527296
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Rutgers University
3 Rutgers Plaza
New Brunswick, NJ 8901
Contact: Charles Wyckoff
Contact Phone: 7329320115