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High Purity SiC Crystals by the HTCVD Process

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
78444
Program Year/Program:
2006 / SBIR
Agency Tracking Number:
053-1599
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
CapeSym, Inc.
6 Huron Drive Suite 1B Natick, MA 01760-1325
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2006
Title: High Purity SiC Crystals by the HTCVD Process
Agency / Branch: DOD / MDA
Contract: HQ0006-06-C-7413
Award Amount: $99,295.00
 

Abstract:

This program focuses on growth of uncompensated semi-insulating SiC crystals by using high purity precursor gases in a novel High Temperature CVD reactor. The crystal growth process is tailored to minimize release of impurities into the growth chamber and incorporation of these impurities into the growing crystal.

Principal Investigator:

Shariar Motakef
President
5086537100
motakef@capesym.com

Business Contact:

Shariar Motakef
President
5086537100
motakef@capesym.com
Small Business Information at Submission:

CAPESYM, INC.
6 Huron Drive, Suite 1B Natick, MA 01760

EIN/Tax ID: 203403414
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No