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Low Defect LWIR Substrates by the Detached Growth Method

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
78786
Program Year/Program:
2006 / SBIR
Agency Tracking Number:
053-1373
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
CapeSym, Inc.
6 Huron Drive Suite 1B Natick, MA 01760-1325
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2006
Title: Low Defect LWIR Substrates by the Detached Growth Method
Agency / Branch: DOD / MDA
Contract: W9113M-06-C-0090
Award Amount: $99,891.00
 

Abstract:

This proposal is focused on the development of a novel method for the growth of low-dislocation-density, high-purity, and low-precipitate-concentration CdZnTe and CdSeTe crystals for use as substrates for MCT detectors. This work is motivated by the observation that II-VI compound semiconductors grown detached from the containment wall in space, as well as other materials grown on earth, have exhibited significantly lower dislocation density and higher purity. This program will seek to grow detached Cd(Zn,Se)Te crystals through the development of a feedback-controlled detached growth process, where the signals generated by a non-intrusive sensor are used to maintain a detachment gap of the order of 50-100 microns between the growing crystal and the ampoule.

Principal Investigator:

Matthew Overholt
Senior Engineer
5086537100
overholt@capesim.com

Business Contact:

Shariar Motakef
President
5086537100
motakef@capesim.com
Small Business Information at Submission:

CAPESYM, INC.
6 Huron Drive, Suite 1B Natick, MA 01760

EIN/Tax ID: 203403414
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No