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Company Information:

Name: CERMET, INC.
Address: 1019 Collier Road
Suite C1
Atlanta, GA 30318
Located in HUBZone: No
Woman-Owned: No
Minority-Owned: No
URL: N/A
Phone: (404) 351-0005

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $1,217,987.00 15
SBIR Phase II $3,983,497.00 6
STTR Phase I $774,081.00 10
STTR Phase II $1,997,990.00 3

Award List:

Powder Synthesis and Bulk Crystal Growth of Gallium Nitride

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Jeff E. Nause
Award Amount: $59,084.00
Abstract:
The primary goal of Phase I work is to demonstrate the feasibility of synthesizing gallium nitride (GaN) powder. Secondarily, this powder will be used to grow high-purity single crystals of GaN from a liquid GaN phase. This would be accomplished using a proprietary variation of the skull melting… More

Wide Band Gap ZnO p-n Junction

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Thomas Kropewnicki
Award Amount: $69,401.00

Seeded Melt Growth of Pure and Stabilized ZnO Bulk Single Crystals

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Jeffrey Nause
Award Amount: $66,352.00

High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

Award Year / Program / Phase: 1999 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: Virginia Commonwealth University
Principal Investigator: Jeff Nause
Award Amount: $65,000.00
RI Contact: N/A

Wide Band Gap ZnO p-n Junction

Award Year / Program / Phase: 2000 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Vicente Munne
Award Amount: $735,000.00

Seeded Melt Growth of Pure and Stabilized ZnO Bulk Single Crystals

Award Year / Program / Phase: 2000 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Jeff Nause
Award Amount: $349,863.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Vicente Munne, Principal Rsrch. Engineer
Award Amount: $76,839.00

N/A

Award Year / Program / Phase: 2000 / STTR / Phase I
Agency: DOE
Research Institution: Washington State University
Principal Investigator: Dr. Vicente Munne, Principal Investigator
Award Amount: $99,587.00
RI Contact: N/A

Development of a Truly Lattice-Matched III-Nitride Technology for

Award Year / Program / Phase: 2001 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: GEORGIA INSTITUTE OF TECHNOLOGY
Principal Investigator: Jeff E. Nause, President
Award Amount: $70,000.00
RI Contact: Kathy Moore-Hall
Abstract:
Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while… More

ZnO Based UV Detector

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Vicente Munne, Principal Rsrch. Engineer
Award Amount: $69,998.00
Abstract:
"The goal of this project is to demonstrate the feasibility of growing solar blind UV photodetectors made of zinc oxide. The primary goal of Phase I will be to demonstrate the growth of high quality homoepitaxial thin films of pure and alloyed ZnO usingCermet's MOCVD reactor and in-house fabricated… More

ZnO Based Integrated Photonics

Award Year / Program / Phase: 2002 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: Georgia Institute of Technology
Principal Investigator: Vicente Munne, Principal Rsrch. Engineer
Award Amount: $69,990.00
RI Contact: James Berkowitz
Abstract:
"ZnO is an excellent candidate for the growing field of nanophotonics due to its index of refraction, availability of native substrates, and the possibility of light emission. These properties make ZnO an ideal candidate on this growing field. Phase Iwork will concentrate in designing and… More

Development of Lattice-Matched AlInN MBE Technology for UV Emitters and High Frequency Electronic Applications

Award Year / Program / Phase: 2002 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: Georgia Institute of Technology
Principal Investigator: Jeff Nause, President, Cermet Inc.
Award Amount: $70,000.00
RI Contact: Alan Doolittle
Abstract:
"Cermet, in collaboration with researchers at Georgia Institute of Technology, propose to implement a lattice matched AlInN using existing substrate technology. The implementation of a lattice matched substrate promises to produce near dislocation freeAlInN heterojunction for the first time while… More

Bulk Growth of Aluminum Nitride

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Vicente Munne, Principal Research Engine
Award Amount: $685,100.00
Abstract:
The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cermet will employ a novel, proprietary crucible techniqueto allow the production of Al and AlN vapor… More

Development of ZnO-GaN hybrid spin LED

Award Year / Program / Phase: 2003 / STTR / Phase I
Agency / Branch: DOD / USAF
Research Institution: PROF. IAN FERGUSON
Principal Investigator: Varatharajan Rengaraj, Principal Research Engineer
Award Amount: $99,861.00
RI Contact: James Berkowitz
Abstract:
The goal of this effort is to grow ZnO-GaN hybrid spin LED structures. Two different spin LED structures will be fabricated. Cermet, Inc and Georgia Institute of Technology will grow oxide on nitride and nitride on oxide LED structures through MOCVD. Thequality of the grown structures will be… More

Development of ZnO spin Field Effect Transistor (FET)

Award Year / Program / Phase: 2003 / STTR / Phase I
Agency / Branch: DOD / USAF
Research Institution: PROF. HADIS MORKO¿
Principal Investigator: Varatharajan Rengaraj, Principal Research Engineer
Award Amount: $99,741.00
RI Contact: Deborah W. Valenti
Abstract:
The goal of this effort is to grow transition metal doped ZnO on native substrates, characterize the films, and design a prototype spin FET based on ZnO. The main objective of phase I will be to demonstrate the growth of high quality homoepitaxial thisfilms of transition metal doped ZnO on ZNO… More

UV LEDs for Solid State Lighting

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency: DOE
Principal Investigator: Jeff E. Nause
Award Amount: $99,694.00
Abstract:
72979S03-I This project will develop technology to enable the commercial production of high-quality (In,Al,Ga)N epitaxial materials and high-performance UV LEDs for solid state lighting applications on AlN substrates. This will be accomplished by developing a production-quality bulk AlN wafer,… More

High Power, Modulation Doped AlGaN/GaN FETs

Award Year / Program / Phase: 2003 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: VIRGINIA COMMONWEALTH UNIV.
Principal Investigator: Jeff E. Nause, President
Award Amount: $0.00
RI Contact: Elizabeth L.Browder
Abstract:
Two major opportunities are outlined in the proposed Phase II work. The first opportunity is the demonstration of doped ZnO bulk crystal growth with specific electrical properties. The second opportunity is the growth of nitride heterostructures on thesesubstrates. High quality, doped ZnO bulk… More

ZnO Based Short Wavelength Laser

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Vicente Munne, Principal Research Engine
Award Amount: $70,000.00
Abstract:
Cermet, in collaboration with the Palo Alto Research Center, will fabricate and test a ZnO based semiconductor laser diode. Using Cermet's in house grown ZnO single crystal wafers, homoepitaxial films and epiwafers will be grown and characterized. Alaser diode will be designed with a prototype… More

High Efficiency Green Emitter

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Jeff Nause, President
Award Amount: $98,955.00
Abstract:
Cermet and researchers at Georgia Institute of Technology propose a high efficiency green emitter with significantly lower defect densities compared to current state of the art. This low defect density approach will reduce non-radiative recombinationcenters in the emitter, enhancing brightness at… More

Bulk Growth of Gallium Nitride Single Crystal Boules

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Vicente Munne, Principal Rsrch. Engineer
Award Amount: $70,000.00
Abstract:
The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then… More

High Efficiency Green Emitter

Award Year / Program / Phase: 2004 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: Jeff Nause, President
Award Amount: $749,974.00
Abstract:
Cermet proposes to develop efficient green emitters (555-585 nm) in this program. The program will focus on the growth of homogenous, low defect density GaInN emitter structures on commercially viable semiconductor substrates. The reduction of non-radiative recombination centers will enhance the… More

Development of ZnO-GaN hybrid spin LED

Award Year / Program / Phase: 2005 / STTR / Phase II
Agency / Branch: DOD / USAF
Research Institution: GEORGIA INSTITUTE OF TECHNOLOGY
Principal Investigator: Varatharajan Rengaraj, Principal Investigator
Award Amount: $749,326.00
RI Contact: Ian Ferguson
Abstract:
Cermet, Inc in collaboration with Georgia Institute of Technology proposes to develop spin Light Emitting Diode (LED) in a 24 month Phase II program. The spin LED is a simple yet powerful spintronic device that produces circularly polarized light and is a potent tool to quantify the spin injection… More

ZnO Based Light Emitters for UV/Blue Applications

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Jeff E. Nause, President
Award Amount: $69,943.00
Abstract:
The goal of this effort is to grow n and p ZnO thin films by MOCVD on ZnO substrates. The primary objective of this phase I effort will be to grow p-n homojucntion and characterize the LED structure. Bandgap of ZnO will be engineered and heterojunction quantum wells will be grown. The grown device… More

ZnO Based Light Emitters for UV/Blue Applications

Award Year / Program / Phase: 2005 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Ming Pan, Principal Research Engine
Award Amount: $729,328.00
Abstract:
The goal of this program is to develop ZnO based light emitters fabricated on high quality ZnO bulk substrates. The work will focus on enhance doping of the active layers, target alloy concentrations and prototype emitter fabrication.

UV TO IR LIGHT EMITTER

Award Year / Program / Phase: 2006 / STTR / Phase I
Agency / Branch: DOD / USAF
Research Institution: GEORGIA INSTITUTE OF TECHNOLOGY
Principal Investigator: Varatharajan Rengarajan, Principal Research Engineer
Award Amount: $99,994.00
RI Contact: Ian Ferguson
Abstract:
Cermet, Inc in collaboration with Georgia Institute of Technology proposes to develop ZnO based light emitter with light emission wavelengths ranging from UV to IT. On successful completion of the proposed effort, the market place will have a unified device structure based ZnO that emits light from… More

High Efficiency Electron Detector for Electron Microscopy

Award Year / Program / Phase: 2007 / STTR / Phase I
Agency: DOE
Research Institution: Argonne National Laboratory
Principal Investigator: Varatharajan Rengarajan, Dr
Award Amount: $99,908.00
RI Contact: Nestor J. Zaluzec
Abstract:
This project seeks to demonstrate an improved, ultra fast and high efficiency electron detector for electron microscopy. The proposed approach will have high radiation resistance compared to current state-of-the-art detectors. The detector also will have a very low decay time, which will enable a… More

High Efficient Photodetectors

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency / Branch: DOD / DTRA
Principal Investigator: Varatharajan Rengarajan, Principal Research Engineer
Award Amount: $99,953.00
Abstract:
The goal of this effort is to demonstrate an high efficient photodetector to replace the conventional photo multiplier tubes (PMT) in gamma radiation detection process. In the proposed effort. Cermet will grow and fabricate ZnO based photodetectors for the detector of scintillated light in the… More

InGaN-based Thin Multijunction Solar Cells

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Ming Pan, Principal Research Engineer
Award Amount: $99,974.00
Abstract:
InGaN-based thin multijunction solar cells will be developed to achieve an efficiency as high as 40%. These solar cells are of light weight and high radiaton hardness which are most suitable for space application.

ZnO alloy based LEDs and laser diodes

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Jeff Nause, President
Award Amount: $69,885.00
Abstract:
Cermet proposes to demonstrate MgZnCdO based light emitting diodes on native substrates. This will be accomplished by focusing on three technical areas. First, Cermet will increase its existing p-type ZnO capability to greater than 1e18 holes per cm^3. Second, Cermet will refine alloy growth… More

Indium Gallium Nitride (InGaN) Solar Cell

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Jeff Nause, President
Award Amount: $98,000.00
Abstract:
This phase I development will provide a low defect InGaN p-n junction tuned to 2.6 eV. The characteristics of the junction will be high electron and hole concentrations, low defect density and no phase separation in the InGaN. This will be accomplished using a revolutionary epitaxial technique,… More

Nonpolar Green LEDs Based on InGaN

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: DOE
Principal Investigator: Jeff Nause, Mr.
Award Amount: $99,909.00
Abstract:
Current green LEDs suffer from lower efficiency compared to blue and red LEDs. This lower efficiency hampers the use of RGB solutions to solid state light sources. This project will bridge the ¿green gap¿ by developing nonpolar green InGaN-based LEDs with state of the art properties. These… More

Indium Gallium Nitride (InGaN) Solar Cell

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: Jeff Nause, President
Award Amount: $734,232.00
Abstract:
Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi-junction InGaN geometries, highly efficient solar cells will be demonstrated.