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CERMET, INC.

Company Information
Address
1019 Collier Road Suite C1
Atlanta, GA 30318
United States



Information

UEI: N/A

# of Employees: 12


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. ZnO Based Light Emitters for UV/Blue Applications

    Amount: $69,943.00

    The goal of this effort is to grow n and p ZnO thin films by MOCVD on ZnO substrates. The primary objective of this phase I effort will be to grow p-n homojucntion and characterize the LED structure. ...

    SBIRPhase I2005Department of Defense Army
  2. ZnO Based Light Emitters for UV/Blue Applications

    Amount: $728,732.00

    The goal of this program is to develop ZnO based light emitters fabricated on high quality ZnO bulk substrates. The work will focus on enhance doping of the active layers, target alloy concentrations ...

    SBIRPhase II2005Department of Defense Army
  3. High Efficiency Green Emitter

    Amount: $1,113,770.00

    Cermet proposes to develop efficient green emitters (555-585 nm) in this program. The program will focus on the growth of homogenous, low defect density GaInN emitter structures on commercially viabl ...

    SBIRPhase II2004Department of Defense Defense Advanced Research Projects Agency
  4. Bulk Growth of Aluminum Nitride

    Amount: $685,100.00

    The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cerm ...

    SBIRPhase II2003Department of Defense Missile Defense Agency
  5. Development of ZnO-GaN hybrid spin LED

    Amount: $99,861.00

    The goal of this effort is to grow ZnO-GaN hybrid spin LED structures. Two different spin LED structures will be fabricated. Cermet, Inc and Georgia Institute of Technology will grow oxide on nitride ...

    STTRPhase I2003Department of Defense Air Force
  6. Development of ZnO spin Field Effect Transistor (FET)

    Amount: $99,741.00

    The goal of this effort is to grow transition metal doped ZnO on native substrates, characterize the films, and design a prototype spin FET based on ZnO. The main objective of phase I will be to demon ...

    STTRPhase I2003Department of Defense Air Force
  7. UV LEDs for Solid State Lighting

    Amount: $99,694.00

    72979S03-I This project will develop technology to enable the commercial production of high-quality (In,Al,Ga)N epitaxial materials and high-performance UV LEDs for solid state lighting applications ...

    SBIRPhase I2003Department of Energy
  8. High Power, Modulation Doped AlGaN/GaN FETs

    Amount: $0.00

    Two major opportunities are outlined in the proposed Phase II work. The first opportunity is the demonstration of doped ZnO bulk crystal growth with specific electrical properties. The second opportun ...

    STTRPhase I2003Department of Defense Missile Defense Agency
  9. ZnO Based Short Wavelength Laser

    Amount: $70,000.00

    Cermet, in collaboration with the Palo Alto Research Center, will fabricate and test a ZnO based semiconductor laser diode. Using Cermet's in house grown ZnO single crystal wafers, homoepitaxial fil ...

    SBIRPhase I2003Department of Defense Navy
  10. High Efficiency Green Emitter

    Amount: $98,955.00

    Cermet and researchers at Georgia Institute of Technology propose a high efficiency green emitter with significantly lower defect densities compared to current state of the art. This low defect densi ...

    SBIRPhase I2003Department of Defense Defense Advanced Research Projects Agency
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