The primary goal of Phase I work is to demonstrate the feasibility of synthesizing gallium nitride (GaN) powder. Secondarily, this powder will be used to grow high-purity single crystals of GaN from a liquid GaN phase. This would be accomplished using a proprietary variation of the skull melting… More

Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while… More

"The goal of this project is to demonstrate the feasibility of growing solar blind UV photodetectors made of zinc oxide. The primary goal of Phase I will be to demonstrate the growth of high quality homoepitaxial thin films of pure and alloyed ZnO usingCermet's MOCVD reactor and in-house fabricated… More

"ZnO is an excellent candidate for the growing field of nanophotonics due to its index of refraction, availability of native substrates, and the possibility of light emission. These properties make ZnO an ideal candidate on this growing field. Phase Iwork will concentrate in designing and… More

"Cermet, in collaboration with researchers at Georgia Institute of Technology, propose to implement a lattice matched AlInN using existing substrate technology. The implementation of a lattice matched substrate promises to produce near dislocation freeAlInN heterojunction for the first time while… More

The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cermet will employ a novel, proprietary crucible techniqueto allow the production of Al and AlN vapor… More

The goal of this effort is to grow ZnO-GaN hybrid spin LED structures. Two different spin LED structures will be fabricated. Cermet, Inc and Georgia Institute of Technology will grow oxide on nitride and nitride on oxide LED structures through MOCVD. Thequality of the grown structures will be… More

The goal of this effort is to grow transition metal doped ZnO on native substrates, characterize the films, and design a prototype spin FET based on ZnO. The main objective of phase I will be to demonstrate the growth of high quality homoepitaxial thisfilms of transition metal doped ZnO on ZNO… More

72979S03-I This project will develop technology to enable the commercial production of high-quality (In,Al,Ga)N epitaxial materials and high-performance UV LEDs for solid state lighting applications on AlN substrates. This will be accomplished by developing a production-quality bulk AlN wafer,… More

Two major opportunities are outlined in the proposed Phase II work. The first opportunity is the demonstration of doped ZnO bulk crystal growth with specific electrical properties. The second opportunity is the growth of nitride heterostructures on thesesubstrates. High quality, doped ZnO bulk… More

Cermet, in collaboration with the Palo Alto Research Center, will fabricate and test a ZnO based semiconductor laser diode. Using Cermet's in house grown ZnO single crystal wafers, homoepitaxial films and epiwafers will be grown and characterized. Alaser diode will be designed with a prototype… More

Cermet and researchers at Georgia Institute of Technology propose a high efficiency green emitter with significantly lower defect densities compared to current state of the art. This low defect density approach will reduce non-radiative recombinationcenters in the emitter, enhancing brightness at… More

The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then… More

Cermet proposes to develop efficient green emitters (555-585 nm) in this program. The program will focus on the growth of homogenous, low defect density GaInN emitter structures on commercially viable semiconductor substrates. The reduction of non-radiative recombination centers will enhance the… More

Cermet, Inc in collaboration with Georgia Institute of Technology proposes to develop spin Light Emitting Diode (LED) in a 24 month Phase II program. The spin LED is a simple yet powerful spintronic device that produces circularly polarized light and is a potent tool to quantify the spin injection… More

The goal of this effort is to grow n and p ZnO thin films by MOCVD on ZnO substrates. The primary objective of this phase I effort will be to grow p-n homojucntion and characterize the LED structure. Bandgap of ZnO will be engineered and heterojunction quantum wells will be grown. The grown device… More

The goal of this program is to develop ZnO based light emitters fabricated on high quality ZnO bulk substrates. The work will focus on enhance doping of the active layers, target alloy concentrations and prototype emitter fabrication.

Cermet, Inc in collaboration with Georgia Institute of Technology proposes to develop ZnO based light emitter with light emission wavelengths ranging from UV to IT. On successful completion of the proposed effort, the market place will have a unified device structure based ZnO that emits light from… More

This project seeks to demonstrate an improved, ultra fast and high efficiency electron detector for electron microscopy. The proposed approach will have high radiation resistance compared to current state-of-the-art detectors. The detector also will have a very low decay time, which will enable a… More

The goal of this effort is to demonstrate an high efficient photodetector to replace the conventional photo multiplier tubes (PMT) in gamma radiation detection process. In the proposed effort. Cermet will grow and fabricate ZnO based photodetectors for the detector of scintillated light in the… More

InGaN-based thin multijunction solar cells will be developed to achieve an efficiency as high as 40%. These solar cells are of light weight and high radiaton hardness which are most suitable for space application.

Cermet proposes to demonstrate MgZnCdO based light emitting diodes on native substrates. This will be accomplished by focusing on three technical areas. First, Cermet will increase its existing p-type ZnO capability to greater than 1e18 holes per cm^3. Second, Cermet will refine alloy growth… More

This phase I development will provide a low defect InGaN p-n junction tuned to 2.6 eV. The characteristics of the junction will be high electron and hole concentrations, low defect density and no phase separation in the InGaN. This will be accomplished using a revolutionary epitaxial technique,… More

Current green LEDs suffer from lower efficiency compared to blue and red LEDs. This lower efficiency hampers the use of RGB solutions to solid state light sources. This project will bridge the ¿green gap¿ by developing nonpolar green InGaN-based LEDs with state of the art properties. These… More

Cermet, in collaboration with leading university partners, proposes to use state of the art indium gallium nitride growth technology to produce InGaN junctions for solar cell production. Using multi-junction InGaN geometries, highly efficient solar cells will be demonstrated.