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Bulk Growth of Aluminum Nitride

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
47546
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
00-0807
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
CERMET, INC.
1019 Collier Road Suite C1 Atlanta, GA 30318
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2003
Title: Bulk Growth of Aluminum Nitride
Agency / Branch: DOD / MDA
Contract: N0001401C0248
Award Amount: $685,100.00
 

Abstract:

The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cermet will employ a novel, proprietary crucible techniqueto allow the production of Al and AlN vapor with no contamination from the crucible. The vapor will then be deposited onto a seed in a nitrogen containing atmosphere in the form of AlN. Crystals will be characterized using x-ray diffraction and electronmicroscopy. This technique will provide BMDO with a source of high quality single crystal AlN wafers.This technology will provide a source for AlN single crystal wafers, which will be used in the fabrication of GaN laser diodes, high power nitridetransistors, nitride blue and white light emitting diodes, and nitride photodetectors.

Principal Investigator:

Vicente Munne
Principal Research Engine
4043510005
vmunne@cermetinc.com

Business Contact:

Jeff Nause
President
4043510005
jnause@cermetinc.com
Small Business Information at Submission:

CERMET, INC.
1019 Collier Road, Suite C1 Atlanta, GA 30318

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No