Bulk Growth of Aluminum Nitride
Agency / Branch:
DOD / MDA
The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cermet will employ a novel, proprietary crucible techniqueto allow the production of Al and AlN vapor with no contamination from the crucible. The vapor will then be deposited onto a seed in a nitrogen containing atmosphere in the form of AlN. Crystals will be characterized using x-ray diffraction and electronmicroscopy. This technique will provide BMDO with a source of high quality single crystal AlN wafers.This technology will provide a source for AlN single crystal wafers, which will be used in the fabrication of GaN laser diodes, high power nitridetransistors, nitride blue and white light emitting diodes, and nitride photodetectors.
Small Business Information at Submission:
1019 Collier Road, Suite C1 Atlanta, GA 30318
Number of Employees: