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Development of ZnO spin Field Effect Transistor (FET)
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2003Title: Development of ZnO spin Field Effect Transistor (FET)Agency / Branch: DOD / USAFContract: F49620-03-C-0118Award Amount: $99,741.00
Abstract:
The goal of this effort is to grow transition metal doped ZnO on native substrates, characterize the films, and design a prototype spin FET based on ZnO. The main objective of phase I will be to demonstrate the growth of high quality homoepitaxial thisfilms of transition metal doped ZnO on ZNO using Cermet's MOCVD technology and in-house fabricated substrates. The quality of the films will be analyzed by X-ray, PL and DLTS. Electrical and magnetic properties will be investigated. Successfulcompletion of Phase I will yield room temperature spintronic material based ZnO for electronic and optical applications. This proposed work provides basis for a spin FET with more efficient operation. Spin FET needs less power than a conventional FET andits efficiency is higher than the conventional FET. Defense systems, automotive, commercial aviation and commercial communications industries will benefit from this technologySmall Business Information at Submission:Principal Investigator:
Varatharajan Rengaraj
Principal Research Engineer
4043510005
vrajan@cermetinc.comResearch Institution Information:Cermet, Inc.
1019 Collier Road, Suite C1 Atlanta, GA 30318EIN/Tax ID:DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: NoPROF. HADIS MORKO¿
Virginia Commonwealth Univ., 601 West Main St.
Richmond, VA 23284Contact: Deborah W. ValentiContact Phone: (804) 827-3322RI Type: Nonprofit college or university
Award Information
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Agency: Department of Defense |
Branch: Air Force |
Award ID: 62689 |
Program Year/Program: 2003 / STTR |
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Agency Tracking Number: F033-0313 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |