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ZnO Based Short Wavelength Laser

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
64993
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
N031-1471
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
CERMET, INC.
1019 Collier Road Suite C1 Atlanta, GA 30318
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2003
Title: ZnO Based Short Wavelength Laser
Agency / Branch: DOD / NAVY
Contract: N00014-03-M-0260
Award Amount: $70,000.00
 

Abstract:

Cermet, in collaboration with the Palo Alto Research Center, will fabricate and test a ZnO based semiconductor laser diode. Using Cermet's in house grown ZnO single crystal wafers, homoepitaxial films and epiwafers will be grown and characterized. Alaser diode will be designed with a prototype fabricated at the end of Phase II. The applications for a room temperature, ZnO p-n junctions, LEDs and laser diodes are vast. A transparent p-type conductor would be available to increase the efficiency ofestablished emitter and detector applications, including light emitting diodes, laser diodes, sensors / photodetectors, and photovoltaics. Additionally, a new family of transparent ZnO-based devices could be developed, including efficient UV/blue lightemitting diodes, sensors / photodetectors, and laser diodes.

Principal Investigator:

Vicente Munne
Principal Research Engine
4043510005
vmunne@cermetinc.com

Business Contact:

Jeff E. Nause
President
4043510005
jnause@cermetinc.com
Small Business Information at Submission:

CERMET, INC.
1019 Collier Road, Suite C1 Atlanta, GA 30318

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No