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Bulk Growth of Gallium Nitride Single Crystal Boules

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
63960
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
02-0105
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
CERMET, INC.
1019 Collier Road Suite C1 Atlanta, GA 30318
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2003
Title: Bulk Growth of Gallium Nitride Single Crystal Boules
Agency / Branch: DOD / MDA
Contract: N0001402M0158
Award Amount: $70,000.00
 

Abstract:

The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then be crystallized on a seed in a nitrogen-containing atmosphere in the form of GaN boules. Crystals will be characterized using x-ray diffraction, electron microscopy, and GDMS. This technique will provideBMDO with a high quality source of single crystal GaN. This Technology will provide a source for GaN single crystals, which will be used in the fabrication of nitride laser diodes, high power nitride devices, nitride blue and white light emitting diodes,and nitride photodetectors.

Principal Investigator:

Vicente Munne
Principal Rsrch. Engineer
4043510005
vmunne@cermetinc.com

Business Contact:

Jeff E. Nause
President
4043510005
jnause@cermetinc.com
Small Business Information at Submission:

CERMET, INC.
1019 Collier Road, Suite C1 Atlanta, GA 30318

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No