Bulk Growth of Gallium Nitride Single Crystal Boules
Agency / Branch:
DOD / MDA
The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then be crystallized on a seed in a nitrogen-containing atmosphere in the form of GaN boules. Crystals will be characterized using x-ray diffraction, electron microscopy, and GDMS. This technique will provideBMDO with a high quality source of single crystal GaN. This Technology will provide a source for GaN single crystals, which will be used in the fabrication of nitride laser diodes, high power nitride devices, nitride blue and white light emitting diodes,and nitride photodetectors.
Small Business Information at Submission:
1019 Collier Road, Suite C1 Atlanta, GA 30318
Number of Employees: