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Indium Gallium Nitride (InGaN) Solar Cell

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
91925
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
08SB2-0794
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
CERMET, INC.
1019 Collier Road Suite C1 Atlanta, GA 30318
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: Indium Gallium Nitride (InGaN) Solar Cell
Agency / Branch: DOD / DARPA
Contract: W31P4Q-09-C-0212
Award Amount: $98,000.00
 

Abstract:

This phase I development will provide a low defect InGaN p-n junction tuned to 2.6 eV. The characteristics of the junction will be high electron and hole concentrations, low defect density and no phase separation in the InGaN. This will be accomplished using a revolutionary epitaxial technique, combined with lattice-matched substrates and state of the art device fabrication.

Principal Investigator:

Jeff Nause
President
4043510005
jnause@cermetinc.com

Business Contact:

Jeff Nause
President
4043510005
jnause@cermetinc.com
Small Business Information at Submission:

CERMET, INC.
1019 Collier Road Suite C1 Atlanta, GA 30318

EIN/Tax ID: 580195334
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No