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Company Information:

Company Name:
Soraa, Inc.
Address:
6500 Kaiser Drive
Fremont, CA
Phone:
(805) 696-6999
URL:
EIN:
261559313
DUNS:
809425742
Number of Employees:
120
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $498,763.00 4
SBIR Phase II $998,932.00 2
STTR Phase I $200,000.00 2
STTR Phase II $750,000.00 1

Award List:

SBIR Phase I: High Quality, Low Cost Bulk Gallium Nitride Substrates

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,935.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase I project will investigate the feasibility of growth of high quality, low cost bulk gallium nitride substrates by the high pressure ammonothermal method. The proposed approach utilizes a novel apparatus which is scalable to process volumes of hundreds of… More

Scalable technology for growth of high quality single crystal gallium nitride

Award Year / Program / Phase:
2009 / STTR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Mark P. D'Evelyn, Director of Bulk Crystal
Research Institution:
UC Santa Barbara
RI Contact:
Kevin Stewart
Abstract:
This Small Business Technology Transfer Phase I project will investigate the feasibility of growth of high quality, low cost bulk gallium nitride substrates by the high pressure ammonothermal method. The proposed approach utilizes a novel apparatus which is scalable to process volumes of hundreds of… More

Development of Fabrication Techniques for High Extraction Efficiency Bulk-GaN-Based LEDs

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,767.00
Agency:
DOE
Principal Investigator:
Abstract:
While there have been tremendous advances in light-emitting diode (LED) technology based on gallium nitride (GaN), LED performance still falls short of what is required for solid-state lighting to become a ubiquitous general illumination solution. Recently, it has been demonstrated that… More

Scalable technology for growth of high quality single crystal gallium nitride

Award Year / Program / Phase:
2010 / STTR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Mark D''Evelyn, Vice President, Bulk Technology – (805) 683-1800
Research Institution:
The University of Akron
RI Contact:
Peggy Kraft
Abstract:
We propose to demonstrate and advance several key aspects of our novel, scalable ammonothermal technology for growth of high quality single crystal gallium nitride. Specifically, we propose to demonstrate a high growth rate and high crystalline quality, to design and analyze a pilot-scale reactor,… More

SBIR Phase II:High quality, low cost bulk gallium nitride substrates

Award Year / Program / Phase:
2010 / SBIR / Phase II
Award Amount:
$499,999.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase II project aims to develop a scalable, compact and rapid ammonothermal method to grow high-quality, low-cost bulk gallium nitride (GaN) substrates. A novel apparatus that is scalable to large volumes at modest cost will be utilized to achieve… More

Large-Area Semipolar Ammonothermal GaN Substrates for High-Power LEDs

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
DOE
Principal Investigator:
Mark D'Evelyn, Dr. – 805-683-1885
Abstract:
Soraa proposes to develop low-cost, large area semipolar ammonothermal true bulk GaN substrates. Semipolar bulk GaN substrates are expected to be transformative for high power blue, green, and/or yellow LEDs, enabling high efficiency, high power density LEDs at costs below $3/kilolumen. The large… More

Solvothermal growth of low-defect-density gallium nitride substrates

Award Year / Program / Phase:
2011 / STTR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Mark P. D'Evelyn, Vice President, Bulk Technology – (805) 683-1800
Research Institution:
University of Akron
RI Contact:
Kathryn Watkins-Wendell
Abstract:
ABSTRACT: We propose to develop cost and growth-rate models quantifying the capability for Soraa's proprietary SCoRA ammonothermal reactor and associated procedures to produce bulk GaN with low threading dislocation defect concentrations. The new apparatus and methods will enable major… More

Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$149,061.00
Agency:
DOD
Principal Investigator:
James Raring, VP Engineering – (805) 696-6999
Abstract:
Existing gas and solid state green laser technology is not adequate to Navy"s needs for comm due to the large size, weight, cost, inefficiency, complexity. Furthermore, to modulate these lasers at high frequency, expensive and bulky acousto-optical modulators are required. Additionally, the… More

Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$498,933.00
Agency:
DOD
Principal Investigator:
James Raring, VP Engineering – (408) 921-6948
Abstract:
Existing gas and solid state green laser technology is not adequate to Navy's needs for comm due to the large size, weight, cost, inefficiency, complexity. Furthermore, to modulate these lasers at high frequency, expensive and bulky acousto-optical modulators are required. Additionally, the… More