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EPITAXIAL FILM BAND GAP/COMPOSITION MAPPING USING ELECTRON BEAM…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
9693
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
9693
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Charles Evans & Associates
301 Chesapeake Drive Redwood City, CA 94063
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1989
Title: EPITAXIAL FILM BAND GAP/COMPOSITION MAPPING USING ELECTRON BEAM ELECTROREFLECTANCE: OPTICAL CHARACTERIZATION OF HIGH X ALGAAS WAFERS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $49,963.00
 

Abstract:

IN PHASE I, WE PROPOSE TO INVESTIGATE THE USE OF ELECTRON BEAM ELECTRO-REFLECTANCE (EBER) TO AUTOMATICALLY MAP THE BAND GAP OF HIGH X ALGAAS (X>0.38) EPITAXIAL FILMS ON FULL, 3 INCH GAAS SUBSTRATES AT ROOM TEMPERATURE. THESE COMPOSITIONS OF ALGAAS ARE IMPORTANT FOR HIGH-EFFICIENCY GRINSCH LASERS AND OTHER APPLICATIONS, BUT AS THE CRYSTAL SWITCHES TO AN INDIRECT GAP ABOVE THIS X VALUE, TRADITIONAL OPTICAL METHODS SUCH AS PHOTOLUMINESCENCE (PL) FAIL. WE HAVE ALREADY BEEN SHOWN THAT HIGH X AL(X)GA(1-X)AS FILMS MAY BE SUCCESSFULLY TESTED BY EBER DURING EARLIER RESEARCH. THIS PHASE I WORK WILL INVESTIGATE THE APPLICABILITY OF EBER TO WAFER-SCALE ANALYSIS AND MAPPING OF THESE HIGH X FILMS. FOR THIS PURPOSE, WE WILL MEASURE THE E(0) AND E(1) FEATURES OF BOTH THICK (SEVERAL MICRONS) AND THIN (0.1 MICRON) MBE GROWN AL(X)GA(1-X)AS FILMS OF NOMINAL X = 0.5, 0.6, 0.7, AND 0.8. OUR OBJECTIVE IS TO OBSERVE AND PARAMETRIZE THE OPTICAL MODULATED REFLECTANCE FEATURES OF ALGAAS FILMS IN THE INDIRECT-GAP REGIME.

Principal Investigator:

Dr Michael H Herman
4153694567

Business Contact:

Small Business Information at Submission:

Charles Evans & Associates
301 Chesapeake Dr Redwood City, CA 94063

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No