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SECONDARY ION MASS SPECTROMETER ANALYSIS OF DEFECTS IN SEMICONDUCTORS

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
10632
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
10632
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Charles Evans & Associates
301 Chesapeake Drive Redwood City, CA 94063
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1989
Title: SECONDARY ION MASS SPECTROMETER ANALYSIS OF DEFECTS IN SEMICONDUCTORS
Agency: NSF
Contract: N/A
Award Amount: $49,766.00
 

Abstract:

TRADITIONAL METHODS, SUCH AS CHEMICAL ETCHING AND TEM, FOR CHARACTERIZING DEFECTS IN SEMICONDUCTORS ARE NOT ENTIRELY ADEQUATE AT THE VLSI/ULSI LEVEL OF INTEGRATION. SIMS COUPLED WITH DEFECT DECORATION BY A SIMS-SENSITIVE ELEMENT IS PROPOSED AS A COMPLEMENTARY METHOD. THE OBJECTIVES OF THIS PHASE I PROJECT ARE: (1) TO DETERMINE HOW WELL SIMS CANDETECT OXYGEN PRECIPITATES, DISLOCATION LOOPS, AND STACKING FAULTS IN SILICON WHEN A SIMS-SENSITIVE ELEMENT IS USED TO DECORATE THE DEFECTS; AND (2) TO DETERMINE THE QUANTITATIVE RELATIONSHIP BETWEEN THE SIMS MEASUREMENT OF THE DECORATIVE ELEMENT AND THE DEFECT DENSITY AND SIZE. THEPRIMARY DECORATIVE ELEMENT TO BE STUDIED IS FLUORINE.

Principal Investigator:

Richard S Hockett
Principal Investigator
4153694567

Business Contact:

Small Business Information at Submission:

Charles Evans & Associates
301 Chesapeake Dr Redwood City, CA 94063

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No