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Development and Demonstration of High-Performance InAs/GaSb Superlattice Long…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
96973
Program Year/Program:
2010 / SBIR
Agency Tracking Number:
B093-014-0144
Solicitation Year:
N/A
Solicitation Topic Code:
MDA 09-014
Solicitation Number:
N/A
Small Business Information
Spire Semiconductor, LLC
25 Sagamore Park Road Hudson, NH 03051-4901
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2010
Title: Development and Demonstration of High-Performance InAs/GaSb Superlattice Long Wavelength Infrared Focal Plane Arrays through Improved Sidewall Passiva
Agency / Branch: DOD / MDA
Contract: HQ0006-10-C-7358
Award Amount: $99,493.00
 

Abstract:

Dark current plays an essential role in the performance of LWIR InAs/GaSb SL-based FPAs. Previous improvements in material quality and device design have significantly suppressed bulk contributions to the dark current. The dark current due to surface defects becomes prominent with decreasing detector size, as in the case of high-resolution FPAs. Furthermore, for LWIR FPA with very small band gap energies, a small change in the Fermi level, due to the formation of defects on sidewalls during device fabrication, may cause majority carrier inversion near the sidewall resulting in diode shunts. Therefore, improving the passivation is of particular importance to FPA performance. Spire Semiconductor proposes to make InAs/GaSb SL based LWIR FPAs with low surface leakage current using a unique processing and passivation techniques developed in Spire Semiconductor. In phase I, Spire Semiconductor targets small array (64x64, pixel size ~~25x25 mm-2) with a bulk-limited R0A product and sidewall surface resistivity higher than 10KW cm at an operation temperature of 77K. In Phase II, Spire Semiconductor will work with FLIR to develop high definition 1k x 1k FPAs for Space applications.

Principal Investigator:

Xuebing Zhang
Scientist
6036891235
xzhang@spiresemi.com

Business Contact:

Victor Haven
Director of manufacturing
6036891225
vhaven@spiresemi.com
Small Business Information at Submission:

Spire Semiconductor, LLC
25 Sagamore Park Road Hudson, NH 03051

EIN/Tax ID: 364336926
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No