We propose to develop electronics for operation at temperatures that range from -230oC to +130oC. This new technology will minimize the requirements for external heat sources that are currently necessary for operation of low-temperature electronics. Such technology would significantly improve… More

We are developing CAD tools, models and methodologies for electronics design for circuit operation in extreme environments with focus on very low temperatures (

This Small Business Innovation Research Phase I project is focused on developing computer aided design (CAD) tools for the design of state-of-the-art Silicon Carbide (SiC) Power Double-Diffused Metal-Oxide-Semiconductor Field-Effect-Transistor (DMOSFET) and Insulated Gate Bipolar Transistor (IGBT)… More

We are developing CAD tools, models and methodologies for electronics design for circuit operation in extreme environments with a focus on very low temperature and radiation effects. These new tools and methodologies will help enable NASA to design next generation electronics. Such capabilities will… More

We plan to develop unique CAD design tools, which facilitate the design of 3D integrated circuits and circuit elements, as well as tools to predict the parasitic effects resulting from 3D integration. These CAD tools will use novel techniques to simultaneously simulate the temperature distribution… More

We are developing CAD tools, models and methodologies for electronics design for circuit operation in extreme environments with a focus on very low temperature and radiation effects. These new tools will help enable NASA to design next generation electronics especially for planetary projects… More

We propose to directly harvest energy from infrared (3-14microns) radiation sources using micro-antennas coupled to rectifying diodes and storage capacitors. The antenna receives infrared electromagnetic radiation and the rectifier converts it to direct current which is then stored. Large numbers of… More

Silicon Carbide deep UV detectors can achieve large gains, high signal-to-noise ratios and solar-blind operation, with added benefits of smaller sizes, lower operating voltages, radiation hardness, ruggedness and scalability. The design, fabrication and optimization of SiC UV APDs is challenging due… More

The overall goal at the end of this multi-phase program is to develop an energy harvester composed of rectenna arrays that are connected in parallel that harness significant amounts of infrared electromagnetic energy. The ultimate systems will be capable of harvesting watts, kilowatts of energy… More

Silicon Carbide deep UV detectors can achieve large gains, high signal-to-noise ratios and solar-blind operation, with added benefits of smaller sizes, lower operating voltages, radiation hardness, ruggedness and scalability. SiC UV APDs implementation is challenging due to some material defects,… More

This Small Business Innovation Research (SBIR) Phase I project seeks to develop a novel technique and device for high-speed uncooled room-temperature infrared (IR) imaging using micro-antennas and Metal-Insulator-Metal (MIM) rectifiers. These antenna-rectifier structures, called rectennas, will be… More

Silicon Carbide (SiC) electronics has the potential for revolutionizing the high temperature high power electronics industry. There is a strong need for tools and models for circuit design using the new SiC power devices that are coming to market. Our work in this project will focus on developing… More