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Company Information:

Company Name:
CoolCAD Electronics
Address:
5000 College Avenue
Suite 2103
College Park, MD
Phone:
(240) 432-6535
URL:
EIN:
205470694
DUNS:
784794930
Number of Employees:
10
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $867,177.00 8
SBIR Phase II $2,413,876.00 4
STTR Phase I $149,978.00 1
STTR Phase II $500,000.00 1

Award List:

Electronic Modeling and Design for Extreme Temperatures

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$69,957.00
Agency:
NASA
Principal Investigator:
James M. McGarrity, Principal Investigator
Abstract:
We propose to develop electronics for operation at temperatures that range from -230oC to +130oC. This new technology will minimize the requirements for external heat sources that are currently necessary for operation of low-temperature electronics. Such technology would significantly improve… More

Electronic Modeling and Design for Extreme Temperatures

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$564,327.00
Agency:
NASA
Principal Investigator:
James M. McGarrity, Principal Investigator
Abstract:
We are developing CAD tools, models and methodologies for electronics design for circuit operation in extreme environments with focus on very low temperatures (

SBIR Phase I: Development of Silicon Carbide Power Device and Circuit CAD Tools and Prototyping of SiC Based Power Converters for Hybrid Vehicles and Power Electronic Applications

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,984.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase I project is focused on developing computer aided design (CAD) tools for the design of state-of-the-art Silicon Carbide (SiC) Power Double-Diffused Metal-Oxide-Semiconductor Field-Effect-Transistor (DMOSFET) and Insulated Gate Bipolar Transistor (IGBT)… More

Electronics Modeling and Design for Cryogenic and Radiation Hard Applications

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,678.00
Agency:
NASA
Principal Investigator:
Neil Goldsman, Principal Investigator
Abstract:
We are developing CAD tools, models and methodologies for electronics design for circuit operation in extreme environments with a focus on very low temperature and radiation effects. These new tools and methodologies will help enable NASA to design next generation electronics. Such capabilities will… More

CAD Tool Development and Design for 3D Integrated Circuits: Optimizing Thermal Effects, Delay, Placement and Routing

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$98,915.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Abstract:
We plan to develop unique CAD design tools, which facilitate the design of 3D integrated circuits and circuit elements, as well as tools to predict the parasitic effects resulting from 3D integration. These CAD tools will use novel techniques to simultaneously simulate the temperature distribution… More

Electronics Modeling and Design for Cryogenic and Radiation Hard Applications

Award Year / Program / Phase:
2010 / SBIR / Phase II
Award Amount:
$599,660.00
Agency:
NASA
Principal Investigator:
Siddharth Potbhare, Principal Investigator
Abstract:
We are developing CAD tools, models and methodologies for electronics design for circuit operation in extreme environments with a focus on very low temperature and radiation effects. These new tools will help enable NASA to design next generation electronics especially for planetary projects… More

Modeling, Design and Development of Micrometer Wave Energy Harvester Using Rectenna Arrays

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$98,994.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Michael Holloway, Senior Engineer
Abstract:
We propose to directly harvest energy from infrared (3-14microns) radiation sources using micro-antennas coupled to rectifying diodes and storage capacitors. The antenna receives infrared electromagnetic radiation and the rectifier converts it to direct current which is then stored. Large numbers of… More

Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,687.00
Agency:
NASA
Principal Investigator:
Akin Akturk, Principal Investigator
Abstract:
Silicon Carbide deep UV detectors can achieve large gains, high signal-to-noise ratios and solar-blind operation, with added benefits of smaller sizes, lower operating voltages, radiation hardness, ruggedness and scalability. The design, fabrication and optimization of SiC UV APDs is challenging due… More

Plasmonic Enhanced Infrared Rectennas: Energy Harvesting, Terahertz Detection and Thermal Imaging

Award Year / Program / Phase:
2011 / STTR / Phase I
Award Amount:
$149,978.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Akin Akturk, Senior Scientist – (301) 405-3363
Research Institution:
University of Maryland
RI Contact:
Mario Dagenais
Abstract:
The overall goal at the end of this multi-phase program is to develop an energy harvester composed of rectenna arrays that are connected in parallel that harness significant amounts of infrared electromagnetic energy. The ultimate systems will be capable of harvesting watts, kilowatts of energy… More

Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping

Award Year / Program / Phase:
2012 / SBIR / Phase II
Award Amount:
$749,889.00
Agency:
NASA
Principal Investigator:
Akin Akturk, Principal Investigator
Abstract:
Silicon Carbide deep UV detectors can achieve large gains, high signal-to-noise ratios and solar-blind operation, with added benefits of smaller sizes, lower operating voltages, radiation hardness, ruggedness and scalability. SiC UV APDs implementation is challenging due to some material defects,… More

SBIR Phase I: Rectenna Based Broad Band Infrared Camera

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project seeks to develop a novel technique and device for high-speed uncooled room-temperature infrared (IR) imaging using micro-antennas and Metal-Insulator-Metal (MIM) rectifiers. These antenna-rectifier structures, called rectennas, will be… More

Computer Aided Design Platform for Silicon Carbide Power Electronics

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$149,962.00
Agency:
DOD
Principal Investigator:
Siddharth Potbhare, VP&Senior Scientist – (301) 405-3363
Abstract:
Silicon Carbide (SiC) electronics has the potential for revolutionizing the high temperature high power electronics industry. There is a strong need for tools and models for circuit design using the new SiC power devices that are coming to market. Our work in this project will focus on developing… More

Plasmonic Enhanced Infrared Rectennas: Energy Harvesting, Terahertz Detection and Thermal Imaging

Award Year / Program / Phase:
2013 / STTR / Phase II
Award Amount:
$500,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Siddharth Potbhare, VP – (301) 405-3363
Research Institution:
University of Maryland
RI Contact:
Mario Dagenais
Abstract:
We propose to build a two-dimensional multi-pixel infrared detector based on rectenna technology. The rectennas comprise of a micro-antenna tuned to terahertz reception and an integrated Metal-Insulator-Metal diode. This system captures infrared radiation, rectifies it and converts it to a direct… More

Computer Aided Design Platform for Silicon Carbide Power Electronics

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$500,000.00
Agency:
DOD
Principal Investigator:
Akin Akturk, Vice President – (301) 405-3363
Abstract:
Silicon Carbide (SiC) electronics has the potential for revolutionizing the high temperature high power electronics industry. There is a strong need for tools and models for circuit design using the new SiC power devices that are coming to market. Our work in this project will focus on developing… More