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Development and Packaging of Radiation Immune Nano-Diamond Integrated Circuits…

Award Information

Agency:
Department of Defense 		Branch:
Missile Defense Agency 		Award ID:
96946 		Program Year/Program:
2010 / SBIR
Agency Tracking Number:
B093-006-0482 		Solicitation Year:
N/A 		Solicitation Topic Code:
MDA 09-006 		Solicitation Number:
N/A
Small Business Information
AET, Inc.
1900 S. Harbor City Blvd. Suite 225 Melbourne, FL -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2010
Title: Development and Packaging of Radiation Immune Nano-Diamond Integrated Circuits for Advanced Interceptor Avionics
Agency / Branch: DOD / MDA
Contract: HQ0006-10-C-7303
Award Amount: $99,781.00
 

Abstract:

The goal of this program is to develop nanosacle electronics and packaging technology that is hardened to space and nuclear radiation. Vanderbilt will assist AET in the development of packaging technologies for lateral emission-based diamond devices characterized for temperature insensitivity and radiation hardness. A laterally configured diamond emission device can offer significant advantages for IC-compatible high-speed and RF applications from its low input and negligible parasitic capacitance features, lithography controlled sub 100nm interelectrode gap and versatile emitter geometry, and monolithic integration of multiple device electrodes, all achieved using simple microfabrication process steps. The Vanderbilt University Diamond Laboratory built the first diamond lateral emitter. They have now developed a consistent fabrication technique, paralleling IC process technology for nanodiamond lateral field emission devices, operable at very low electric fields and voltages, generating high currents. Diodes and transistors form the major building blocks of an integrated circuit. Monolithic vacuum diodes and triodes have been developed with the nanodiamond lateral field emitter, using consistent and conventional microelectronic processing techniques. The capability of patterning thousands of these devices monolithically on the same substrate has been demonstrated. These low-voltage operating diamond devices can be suitably developed and interconnected, achieving silicon IC equivalent and compatible logic gates.

Principal Investigator:

Glenn T. Hess
President
3217270328
ghess@aet-usa.com

Business Contact:

Thomas J. Sanders, Jr.
Chief Financial Officer
3217270328
tjs@aet-usa.com
Small Business Information at Submission:

AET, Inc.
1900 S. Harbor City Blvd. Suite 225 Melbourne, FL 32901

EIN/Tax ID: 593226810
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No