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Company Information:

Company Name: CREE RESEARCH, INC.
City: Durham
State: NC
Zip+4: 27703
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $1,272,823.00 20
SBIR Phase II $7,958,636.00 14

Award List:

DEVELOPMENT OF SILICON CARBIDE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FOR HIGH POWER OPERATION AT HIGH TEMPERATURES

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr John W Palmour
Award Amount: $46,946.00

SUBLIMATION GROWTH OF LARGE SINGLE CRYSTALS OF BETA SILICON CARBIDE

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Dr Calvin H Carter Jr
Award Amount: $49,602.00

RADIATION AND ELECTROMAGNETIC PULSE EFFECTS ON SILICON CARBIDE BASED ELECTRONICS

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Dr John A Edmond
Award Amount: $48,609.00

DEVELOPMENT OF SILICON CARBIDE MOSFETS FOR HIGH TEMPERATURE SMALL SIGNAL AMPLIFIERS

Award Year / Program / Phase: 1989 / SBIR / Phase I
Agency: NASA
Principal Investigator: John W Palmour
Award Amount: $49,529.00

RADIATION AND ELECTROMAGNETIC PULSE EFFECTS ON SILICON CARBIDE BASED ELECTRONICS

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Dr John A Edmond
Award Amount: $495,000.00
Abstract:
Silicon carbide (sic) is a semiconductor that possesses a unique combination of physical and electronic properties that make devices produced from this material intrinsically radiation and electromagnetic pulse (emp) resistant. in addition, sic devices can operate at very high temperatures and… More

DEVELOPMENT OF SILICON CARBIDE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FOR HIGH POWER OPERATION AT HIGH TEMPERATURES

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Dr John W Palmour
Award Amount: $408,008.00
Abstract:
Silicon carbide possesses a unique combination of properties that allow simultaneous high temperature and high power operation of electronic devices made from this material. the cubic form of sic (beta) has a wide bandgap (2.2 ev @ 27 deg c), which theoretically gives a maximum operable temperature… More

SUBLIMATION GROWTH OF LARGE SINGLE CRYSTALS OF BETA SILICON CARBIDE

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Dr Calvin H Carter Jr
Award Amount: $490,000.00
Abstract:
Beta silicon carbide (b-sic) possesses a unique combination of properties important for application in high frequency electronic devices capable of operating at high power. the combination of its wide bandgap, high saturated electron drift velocity, high breakdown electric field, low dielectric… More

DEVELOPMENT OF SILICON CARBIDE MOSFETS FOR HIGH TEMPERATURE SMALL SIGNAL AMPLIFIERS

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency: NASA
Principal Investigator: John W Palmour
Award Amount: $483,000.00
Abstract:
A strong need exists for amplification of small electrical signals at high temperatures for use with sensors. silicon carbide possesses a unique combination of properties that allows high temperature operation of electronic devices madefrom this material. the cubic form of sic (beta) has a… More

Development of 6H-SIC CMOS Transistors for Insertion into a 3500C Operational Amplifier

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Dr. John W. Palmour
Award Amount: $49,689.00

A 350 DEGREE C 6H SILICON CARBIDE THYRISTOR

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency: NASA
Principal Investigator: John A. Edmond , Senior Scientist
Award Amount: $50,000.00

Evaluation of High Power 6H-SiC Microwave Field-Effect Transistors for High Temperature Operation

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: John W. Palmour
Award Amount: $50,293.00

Evaluation of High Power 6H-SiC Microwave Field-Effect Transistors for High Temperature Operation

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: John W. Palmour
Award Amount: $491,443.00
Abstract:
There is an increasing need in many military systems to have solid state microwave devices with higher power capability, higher reliability, and higher operating temperatures. These devices would be important for airborne radar systems, electronic warfare and countermeasure systems, and airborne and… More

Development of 6H-SIC CMOS Transistors for Insertion into a 3500C Operational Amplifier

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Dr. John W. Palmour
Award Amount: $350,000.00
Abstract:
Silicon carbide possesses a unique combination of properties, not available from other more common semiconductors, which allow it to operate in certain severe environments. These properties include a wide bandgap, a high melting point, high breakdown electric field, and high thermal conductivity, as… More

EVALUATION OF PROCESSES FOR GROWTH OF BETA SILICON CARBIDE BOULES

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency: NSF
Principal Investigator: Calvin H Carter Jr
Award Amount: $50,000.00
Abstract:
BETA-SIC HAS BEEN KNOWN FOR MANY YEARS TO HAVE EXCELLENT THEORETICAL PROPERTIES FOR THE PRODUCTION OF HIGH POWER MICROWAVE DEVICES. THE COMBINATION OF ITS WIDE BANDGAP (2.2 EV @ 27 DEGREES CENTIGRADE), HIGH SATURATED ELECTRON DRIFT VELOCITY (2.5x10(7) CM/SEC), HIGH BREAKDOWN ELECTRIC FIELD (4x10(6)… More

A 350 DEGREE C 6H SILICON CARBIDE THYRISTOR

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency: NASA
Principal Investigator: John A. Edmond , Senior Scientist
Award Amount: $496,389.00

4H-Silicon Carbide for High Temperature Power MOSFETs

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: John Palmour, Phd
Award Amount: $57,059.00

4H-Silicon Carbide for High Temperature Power MOSFETs

Award Year / Program / Phase: 1994 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: John Palmour, Phd
Award Amount: $400,000.00
Abstract:
THE RAPID DEVELOPMENT OF THE TECHNOLOGY FOR PRODUCING HIGH QUALITY SINGLE CRYSTAL SiC WAFERS AND THIN FILMS PRESENTS THE OPPORTUNITY TO FABRICATE SOLID-STATE DEVICES WITH POWER-TEMPERATURE CAPABILITY FAR GREATER THAN DEVICES CURRENTLY AVAILABLE. THIS CAPABILITY IS IDEALLY SUITED TO THE APPLICATION… More

NITRIDE/4H-SIC HETEROSTRUCTURES HEMTS

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: John Palmour
Award Amount: $59,349.00
Abstract:
The military has a need for high power/high frequency electronics which can operate at high temperatures for applications such as radar and electronic warfare systems. While Si and GaAs are already being used near their limits of output power and operating temperature, the potential of SiC is just… More

A Method for Micropipe Free Silicon Carbide Homoepitaxy

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Vladimir A. Dmitriev
Award Amount: $59,711.00
Abstract:
Silicon carbide (SiC) is the ideal semiconductor for fabrication of solid state devices for power conditioning for the all-electric airplane, turbine engine actuators, and space-based power systems. These applications require switches and amplifiers capable of large currents with relatively low… More

High Voltage 4H-SiC Power Devices

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: John W. Palmour
Award Amount: $63,628.00
Abstract:
The rapid development of the technology for producing high quality single crystal SiC wafers and thin films presents the opportunity to fabricate solid-state devices with power-temperature capability far greater than devices currently available. While conventional silicon power devices are already… More

Totally Solar-Blind UV Detectors from GaN and A1N Alloys

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Gary E. Bulman
Award Amount: $70,860.00
Abstract:
Gallium Nitride has been known for many years to have excellent physical and electronic properties which are well suited to the production of electronic devices that can emit radiation in the blue-to-green region of the spectrum, detect UV radiation, and operate at significantly higher temperatures… More

Development of a High Temperature Silicon Carbide CMOS Technology

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: David B. Slater, Jr.
Award Amount: $59,502.00

High Voltage, High Current 4H-SiC Bipolar Power Devices

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Dr. John W. Palmour
Award Amount: $69,737.00

Development of GaN/AlGaN HEMT's on Silicon Carbide

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Scott T. Allen
Award Amount: $69,615.00

SILICON CARBIDE INSULATED GATE BIPOLAR TRANSISTOR

Award Year / Program / Phase: 1996 / SBIR / Phase I
Agency: NASA
Principal Investigator: John W. Palmour , Senior Scientist
Award Amount: $69,683.00

Development of a High Temperature Silicon Carbide CMOS Technology

Award Year / Program / Phase: 1997 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: David B. Slater, Jr.
Award Amount: $750,000.00
Abstract:
The development of a process for growing single crystal boules of 6H-SiC at the firm has lead to rapid advances in SiC device development and performance including production of the world's only commercially viable blue light emitting diode. Cree is currently using 1.375 inch diameter wafers and is… More

High Voltage, High Current 4H-SiC Bipolar Power Devices

Award Year / Program / Phase: 1997 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Dr. John W. Palmour
Award Amount: $600,000.00
Abstract:
The rapid development of the technology of producing high quality single crystal SiC wafers and thin film presents the opportunity to fabricate solid-state devices with power-temperature capability far greater than devices currently available. This capa- bility is ideally suited for military and… More

Development of GaN/AlGaN HEMT's on Silicon Carbide

Award Year / Program / Phase: 1997 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Scott T. Allen
Award Amount: $749,331.00
Abstract:
There is a need for high power solid state devices operating in the millimeter wave frequency range for both radar applications and high frequency communications networks. While GaAs an InP technologies shave demonstrated operation at extremely high frequencies, the power that they can generate is… More

DEVELOPMENT OF HIGH TEMPERATURE 4H-SiC POWER ACCUFET

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr Ranbir Singh
Award Amount: $99,981.00
Abstract:
4H-silicon carbide power devices are expected to have 3x higher current densities and 200x lower on-resistance, while still operating up to 350 degree C. This is because of an order of magnitude higher breakdown electric field and a 2-3x higher thermal conductivity of 4H-SiC as compared to Si. … More

Evaluaation of alternative High-Temperature high-Field Dielectrics for SiC Devices

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Lori A. Lipkin
Award Amount: $99,969.00
Abstract:
Silicon Carbide is exceptionally well suited for high temperature, high-power electronics. These electronics would be ideal for high-temperature applications for electric combat vehicles, including vehicle propulsion, active protection, electric gun and turret control. Therefore, silicon carbide… More

Uniform Silicon Carbide Epitaxial Layers by Hot Wall Chemical Vapor Deposition

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Michael James Paisley
Award Amount: $99,061.00

N/A

Award Year / Program / Phase: 1999 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Dr Ranbir Singh
Award Amount: $746,741.00

N/A

Award Year / Program / Phase: 1999 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Lori A Lipkin
Award Amount: $749,624.00

Uniform Silicon Carbide Epitaxial Layers by Hot Wall Chemical Vapor Deposition

Award Year / Program / Phase: 2000 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Michael James Paisley
Award Amount: $749,100.00