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DEVELOPMENT OF HIGH TEMPERATURE 4H-SiC POWER ACCUFET

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
41083
Program Year/Program:
1998 / SBIR
Agency Tracking Number:
41083
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
CREE RESEARCH, INC.
4600 Silicon Drive Durham, NC 27703
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1998
Title: DEVELOPMENT OF HIGH TEMPERATURE 4H-SiC POWER ACCUFET
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $99,981.00
 

Abstract:

4H-silicon carbide power devices are expected to have 3x higher current densities and 200x lower on-resistance, while still operating up to 350 degree C. This is because of an order of magnitude higher breakdown electric field and a 2-3x higher thermal conductivity of 4H-SiC as compared to Si. Recent advances in 4H-SiC crystal quality, low doped epitaxial uniformity, dopant ion implantation, reactive ion etching and high voltage edge termination at Cree presents tremendous opportunity to fabricate high power 4H-siC ACCUFET devices. In this Phase I research, 1000 V, 1 Amp ACCUFETs capable of operating up to 350 degree C. The experimental results from the fabricated devices will then be compared with those obtained in the simulation design and further optimization will be carried out in Phase II of the program. A simulation study of various structures possible with an accumulation mode FET will also be conducted.

Principal Investigator:

Dr Ranbir Singh
9193615709

Business Contact:


0
Small Business Information at Submission:

CREE RESEARH, INC.
4600 SILICON DRIVE Durham, NC 27703

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No