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CRYSTAL GROWTH OF CADMIUM TELLURIDE (CDTE) BY THE HEAT EXCHANGER METHOD (HEM)

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
973
Program Year/Program:
1985 / SBIR
Agency Tracking Number:
973
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Crystal Systems, Inc.
27 Congress Street Salem, MA 01970
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1985
Title: CRYSTAL GROWTH OF CADMIUM TELLURIDE (CDTE) BY THE HEAT EXCHANGER METHOD (HEM)
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $400,000.00
 

Abstract:

CADMIUM TELLURIDE (CDTE) CRYSTALS ARE REQUIRED FOR A NUMBER OF APPLICATIONS. ONE OF THE MAIN REQUIREMENTS IS AS MODULATORS OF 10.6 UM CO2 LASER RADIATION, ESPECIALLY IN LASER RADAR. A NUMBER OF CRYSTAL GROWTH PROCESSES HAVE BEEN USED; HOWEVER, ONLY SMALL CRYSTALS WITH LOW YIELDS HAVE BEEN GROWN. IT IS INTENDED TO USE A NEW CRYSTAL GROWTH PROCESS, THE HEAT EXCHANGER METHOD (HEM), AND SHOW FEASIBILITY OF GROWTH FOR CDTE CRYSTALS. SOME OF THE ADVANTAGES OF HEM ARE SUBMERGED SOLID-LIQUID INTERFACE, INDEPENDENT CONTROL OF SOLID AND LIQUID GRADIENTS WITHOUT MOVEMENT, UNIFORM GRADIENTS AT THE CONVEX SOLID-LIQUID INTERFACE, FLEXIBILITY AND PRECISE CONTROL OF HEAT EXCHANGER TEMPERATURE AND IN-SITU ANNEALING OF THE CRYSTAL AFTER GROWTH. THE COMBINATION OF THESE FEATURES AND THE ABILITY TO SCALE UP IN SIZE ALLOW IMPORTANT ADVANTAGES TO HEM. DURING THE PROPOSED PHASE I IT IS INTENDED TO SHOW FEASIBILITY OF GROWTH OF CDTE CRYSTALS IN SEALED QUARTZ AMPULES. ALTERNATE CRUCIBLE MATERIALS AND ENCAPSULATED GROWTH CAN BE EASILY ADAPTED IN THE HEM SYSTEM.

Principal Investigator:

Chandra Khattak
6177450088

Business Contact:

Small Business Information at Submission:

Crystal Systems, Inc.
35 Congress Street Salem, MA 01970

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No