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LARGE CAPACITY ABRUPT JUNCTION MOCVD EPITAXIAL REACTOR

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
5708
Program Year/Program:
1987 / SBIR
Agency Tracking Number:
5708
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Cvd Equipment Corp
160-b E Industry Ct Deer Park, NY 11729
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1987
Title: LARGE CAPACITY ABRUPT JUNCTION MOCVD EPITAXIAL REACTOR
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

PRESENT TECHNOLOGY USED TO FORM EPITAXIAL LAYERS OF III-V COMPOUNDS IS LIMITED TO TRADITIONAL ATMOSPHERIC AND REDUCED PRESSURE MO-CVD REACTORS WHICH FAIL TO ACHIEVE THE DEGREE OF LAYER ABRUPTNESS REQUIRED OF SUPER LATTICE STRUCTURES OF MOLECULAR BEAM EPITAXY (MBE) REACTORS WHICH SUFFER FROM LIMITED THROUGHOUT CAPABILITY. THE DEVELOPMENT PROGRAM OUTLINED IN THIS WORK IS AIMED AT DEVELOPING A MULTISLICE, RAPID SWITCHING, MO-CVD REACTOR SYSTEM WHICH CAN BE USED TO GROW III-V COMPOUND SEMICONDUCTOR LAYERS WITH ATOMIC LAYER ABRUPTNESS. THE TECHNIQUE BEING EXPLORED UTILIZES ATOMIC LAYER EPITAXY (ALE) TO SELECTIVELY DEPOSIT SINGLE ATOMIC LAYERS OF GROUP III AND GROUP V MATERIALS. BY RAPIDLY SWITCHING THE SUBSTRATES BETWEEN SOURCES, THE CRYSTAL LATTICE OF THE SEMICONDUCTOR LAYER CAN BE BUILTUP WITH THE HIGHEST DEGREE OF CONTROL. THIS FEASIBILITY STUDY WILL BE CONDUCTED USING A 3-ONE INCH DIAMETER SUBSTRATOR REACTOR-PHASE II WILL BE THE DEVELOPMENT OF A REACTOR CAPABLE OF 10-THREE INCH DIAMETER SUBSTRATES. A COMPREHENSIVE STUDY IS PERFORMED IN WHICH A COMPARISON IS MADE BETWEEN THE EFFECTS OF RAPID GAS VERSUS SUBSTRATE POSITION SWITCHING.

Principal Investigator:

Bill gartman
5166671460

Business Contact:

Small Business Information at Submission:

Cvd Equipment Corp
160-b E Industry Ct Deer Park, NY 11729

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No