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Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells…
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 2
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Fiscal Year: 2010Title: Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells Using Nano-Patterned Metallic FilmsAgency / Branch: DOD / DARPAContract: W91CRB-11-C-0012Award Amount: $710,641.00
Abstract:
We propose to develop and deliver a nano-patterned metallic light trap platform that will allow ultra-thin InGaN photovoltaics to exhibit extended lifetime by a factor of four when used in low orbit satellite operations. We will test the enhancement of light absorption in InGaN layers with In fraction of 25% for use as an effective method of realizing radiation ultra-hard solar cells for space-based applications. Towards this goal we will deposit metallic films with a thickness bellow 100nm, and optimize the groove / grid pattern design to ensure the coupling to above bandgap light with a wavelength in the range from of 505nm to 520nm.Small Business Information at Submission:RoseStreet Laboratories
3701 E. University Drive Phoenix, AZ 85213EIN/Tax ID: 200517346DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Defense Advanced Research Projects Agency |
Award ID: 96704 |
Program Year/Program: 2010 / SBIR |
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Agency Tracking Number: 09SB2-0362 |
Solicitation Year: N/A |
Solicitation Topic Code: DARPA 09-017 |
Solicitation Number: N/A |