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Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells…

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
96704
Program Year/Program:
2010 / SBIR
Agency Tracking Number:
09SB2-0362
Solicitation Year:
N/A
Solicitation Topic Code:
DARPA 09-017
Solicitation Number:
N/A
Small Business Information
RoseStreet Laboratories
3701 E. University Drive Phoenix, AZ 85213
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2010
Title: Enhanced Light Absorption in thin InGaN Layers for Radiation Hard Solar Cells Using Nano-Patterned Metallic Films
Agency / Branch: DOD / DARPA
Contract: W31P4Q-10-C-0054
Award Amount: $39,359.00
 

Abstract:

We propose to develop and deliver a nano-patterned metallic light trap platform that will allow ultra-thin InGaN photovoltaics to exhibit extended lifetime by a factor of four when used in low orbit satellite operations. We will test the enhancement of light absorption in InGaN layers with In fraction of 25% for use as an effective method of realizing radiation ultra-hard solar cells for space-based applications. Towards this goal we will deposit metallic films with a thickness bellow 100nm, and optimize the groove / grid pattern design to ensure the coupling to above bandgap light with a wavelength in the range from of 505nm to 520nm.

Principal Investigator:

Iulian Gherasoiu
project manager
6024314782
iulian.gherasoiu@flipchip.com

Business Contact:

Bob Forcier
CEO
6024314701
bob.forcier@flipchip.com
Small Business Information at Submission:

RoseStreet Laboratories
3701 E. University Drive Phoenix, AZ 85213

EIN/Tax ID: 200517346
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No