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SYNTHESIS OF LARGE-AREA MONOCRYSTALLINE TIC AS A SUBSTRATE FOR HETEROEPITAXIAL…

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
9620
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
9620
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Diamond Materials Inc.
120 Centennial Avenue Piscataway, NJ 08854
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1989
Title: SYNTHESIS OF LARGE-AREA MONOCRYSTALLINE TIC AS A SUBSTRATE FOR HETEROEPITAXIAL GROWTH OF B-SIC
Agency / Branch: DOD / NAVY
Contract: N/A
Award Amount: $89,804.00
 

Abstract:

THE OBJECTIVE OF THE PROGRAM IS TO SYNTHESIZE A LARGE-AREA, THIN-FILM OF MONOCRYSTALLINE TIC WHICH IS SUITABLE AS SUBSTRATE FOR THE HETEROEPITAXIAL GROWTH OF BETA-SIC. MONOCRYSTALLINE TIC CAN BE GROWN BY CHEMICAL VAPOR DEPOSITION ON A LATTICE-MATCHED SUBSTRATE. DIAMOND MATERIALS INSTITUTE INC (DMI) PLANS TO ACHIEVE THIS GOAL IN TWO PHASES. IN PHASE I, DMI PLANS TO DEMONSTRATE A NOVEL, STEP PROCESS FOR HETEROEPITAXIAL GROWTH OF TIC BY CVD. THE SUBSTRATE WILL BE A FREE-STANDING B-SIC SINGLE CRYSTAL HETEROEPITAXIALLY GROWN ON SI. DMI PROPOSES A NOVEL PROCESS TO GETTER CRYSTALLINE DEFECTS FROM THE B-SIC SURFACE BEFORE TIC DEPOSITION. REMOVAL OF CRYSTALLINE DEFECTS FROM THE SURFACE OF THE B-SIC SUBSTRATE SHOULD PREVENT NUCLEATION OF DEFECTS IN THE TIC. PHASE II WILL SCALE-UP THE PROCESS TO CREATE DEFECT-FREE, TIC MONOCRYSTALS AT LEAST 100 MM IN DIAMETER. PHASE II WILL INCLUDE HETEROEPITAXIAL GROWTH OF SEMICONDUCTOR-GRADE B-SIC ON THE MONOCRYSTALLINE TIC AND THE FABRICATION OF SEMICONDUCTOR DEVICES IN THE B-SIC.

Principal Investigator:

Dr Richard Koba
8142316200

Business Contact:

Small Business Information at Submission:

Diamond Materials Institute In
2820 E College Ave State College, PA 16801

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No