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Company Information:

Company Name: Discovery Semiconductors, Inc.
City: Ewing
State: NJ
Zip+4: 08628-
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
Phone: (609) 434-1311

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $1,061,823.00 12
SBIR Phase II $3,501,872.00 6
STTR Phase I $99,000.00 1
STTR Phase II $750,000.00 1

Award List:

Monolithic, Optically Resonant, Infrared Detector Arrays Using Indium-Gallium-Arsenide on Silicon

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency: NASA
Principal Investigator: Abhay Joshi
Award Amount: $68,600.00

Development of an InP Based Integrated High Speed Photoreceiver

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Abhay M. Joshi
Award Amount: $59,560.00

Monolithic, Optically Resonant, Infrared Detector Arrays Using Indium-Gallium-Arsenide on Silicon

Award Year / Program / Phase: 1995 / SBIR / Phase II
Agency: NASA
Principal Investigator: Abhay Joshi
Award Amount: $531,503.00
Abstract:
We propose to develop 5 element, linear, monolithic, InGaAs-on-Silicon, spectrally selective detector arrays for the near-infrared spectrum (1.0 - 1.7 um). The technique of selective epitaxy will be used to grow (100x100) um area detector mesas on the silicon substrate. Special methods will be used… More

Monolithic, InGaAs-on-Silicon, Optical Interconnects for Massively Parallel Computing

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Abhay M. Joshi
Award Amount: $79,795.00

Development of an InP Based Integrated High Speed Photoreceiver

Award Year / Program / Phase: 1996 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Abhay M. Joshi
Award Amount: $735,357.00
Abstract:
We propose to develop a novel technology for fabricating high speed integrated photoreceiver MMIC chips on the InP substrate. The in- novation consists of a new, unique, optically resonant, high speed InO.53GaO.47As photodetector that has a wavelength selective response. This resonant detector not… More

Monolithic, InGaAs-on-Silicon, Optical Interconnects for Massively Parallel Computing

Award Year / Program / Phase: 1996 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Abhay M. Joshi
Award Amount: $735,012.00
Abstract:
A solution to the problem of interchip interconnects is proposed that employs electro-optical links implemented monolithically on silicon substrates. This approach addresses the fundamental material incompatibility problem of opto-electronics by implementing electronics in silicon and optical… More

InGaAs / InP Based Multi-level Photonic Modules for Millimeter Wave Phased Array Antennas

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Abhay M. Joshi
Award Amount: $99,950.00
Abstract:
The goal of the proposed development is the creation of multilevel photonic modules comprised of monolithic, InGaAs / InP p-i-n photodetector - p-HEMT power amplifier, Opto-electronic integrated circuit (OEIC), that has 60 GHz bandwidth and output power of 100 mW. The photodetector will have a high… More

100 GHz Radio Frequency (RF) Optical Interconnects and Free Space Data Links

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Abhay Mahadeo Joshi
Award Amount: $64,965.00

Ultra-fast, High Saturation Current, InGaAs/InP Photodetectors

Award Year / Program / Phase: 2005 / STTR / Phase I
Agency / Branch: DOD / DARPA
Research Institution: UNIV. OF TEXAS AUSTIN
Principal Investigator: Abhay M. Joshi, President and CEO
Award Amount: $99,000.00
RI Contact: Joe Campbell
Abstract:
In Phase I, we propose to develop high saturation current photodiodes that will meet the following design criteria: (a) Responsivity > 0.7 A/W, (b) 1 dB compression current > 100 mA, (c) Bandwidth > 10 GHz, and (d) Wavelength response of 1300 to 1550 nm. Two different photodiode designs will be… More

Ultra-fast, High Saturation Current, InGaAs/InP Photodetectors

Award Year / Program / Phase: 2007 / STTR / Phase II
Agency / Branch: DOD / DARPA
Research Institution: UNIV. OF VIRGINIA
Principal Investigator: Abhay Joshi, President and CEO
Award Amount: $750,000.00
RI Contact: Campbell
Abstract:
In Phase II, we propose to develop high saturation current photodiodes that will meet the following design criteria: (a) Responsivity > 0.65 A/W, (b) 1 dB compression current > 100 mA, (c) Bandwidth DC to 18 GHz,(d) Wavelength response of 1300 to 1550 nm, and (e) OIP3 of +50 dBm. Three different… More

Low Noise, InGaAs Dual Photodiodes for Precise Timing

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOC / NIST
Principal Investigator: Shubo Datta
Award Amount: $90,000.00
Abstract:
Conversion of highly stable optical clocks into electrical clocks through photodetection introduces excess phase noise and degrades the frequency stability by two to three orders of magnitude.

Ultra-Low Noise Quad Photoreceiver for Space Based Laser Interferometric Gravity Wave Detection

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency: NASA
Principal Investigator: Shubhashish Datta, Principal Investigator
Award Amount: $99,998.00
Abstract:
Gravity wave detection using space-based long-baseline laser interferometric sensors imposes stringent noise requirements on the system components, including the large area photoreceiver front ends. The proposed innovation utilizes dual depletion region technology to produce a large area (1mm… More

Low Noise, InGaAs Dual Photodiodes for Precise Timing

Award Year / Program / Phase: 2009 / SBIR / Phase II
Agency / Branch: DOC / NIST
Principal Investigator:
Award Amount: $300,000.00
Abstract:
Conversion of highly stable optical clocks into electrical clocks through photodetection introduces excess phase noise, thereby degrading the frequency stability. This noise is primarily generated due to the conversion of optical intensity noise into electrical phase noise by photodiode¿s… More

Ultra-fast Photonics-enabled RF Arbitrary Waveform Generation Utilizing Highly Linear, High Power Photodiodes

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Abhay M. Joshi, President & CEO
Award Amount: $70,000.00
Abstract:
We propose to demonstrate a photonic radio-frequency (RF) arbitrary waveform generator (AWG) having (1) 3 dB bandwidth = 10 GHz, (2) time aperture > 2 ns (time-bandwidth product > 20), and (3) maximum RF output amplitude > 3 V. This performance will be facilitated by our proposed highly linear,… More

Low-Noise, UV-to-SWIR Broadband Photodiodes for Large-Format Focal Plane Array Sensors

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency: NASA
Principal Investigator: Abhay Joshi, Principal Investigator
Award Amount: $100,000.00
Abstract:
Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral sub-bands: GaN for UV, Si for visible, and InGaAs for SWIR, requiring expensive component-level… More

Ultra-Low Noise Quad Photoreceiver for Space Based Laser Interferometric Gravity Wave Detection

Award Year / Program / Phase: 2010 / SBIR / Phase II
Agency: NASA
Principal Investigator: Shubhashish Datta, Principal Investigator
Award Amount: $600,000.00
Abstract:
We propose to design and develop 2x2 quad p-i-n InGaAs Photoreceivers having the following characteristics: (a) Active area diameter 0.75 mm; (b) Wavelength coverage 850 to 1700 nm, with responsivity of 0.7 A/W at 1064 nm; (c) Bandwidth up to 20 MHz for the individual quadrant; (d) Group Delay < 6… More

High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner for 2 - 20 GHz Applications

Award Year / Program / Phase: 2010 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Abhay Joshi, President and CEO
Award Amount: $98,955.00
Abstract:
We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) maximum RF output power > 1 W, (4) two-tone OIP3 > 55 dBm, and (5) power-to-phase conversion factor < 3… More

Low-Noise, UV-to-SWIR Broadband Photodiodes for Large-Format Focal Plane Array Sensors

Award Year / Program / Phase: 2011 / SBIR / Phase II
Agency: NASA
Principal Investigator: Abhay M. Joshi, Principal Investigator
Award Amount: $600,000.00
Abstract:
Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral sub-bands: GaN for UV, Si for visible, and InGaAs for SWIR, requiring expensive component-level… More

Packaging High Power Photodetectors for 100 MHz to 100 GHz RF Photonic Applications

Award Year / Program / Phase: 2013 / SBIR / Phase I
Agency: DOD
Principal Investigator: Shubo Datta, Chief Scientist – (609) 434-1311
Award Amount: $150,000.00
Abstract:
ABSTRACT: Discovery Semiconductors will assemble high power InGaAs/InP photodiodes with 50 ohm internal termination in a fiber-pigtailed, W1-connectorized microwave package having the following specifications: (a) Responsivity>0.7 A/W at 1550 nm wavelength; (b) -3 dB Bandwidth>60 GHz; (c)… More

Ruggedized Wideband High Power Balanced Photodiode Receiver

Award Year / Program / Phase: 2014 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Shubo Datta, Chief Scientist – (609) 434-1311
Award Amount: $80,000.00
Abstract:
We will manufacture high current handling balanced photodiodes in a rugged 8-pin Kovar package having the following characteristics: (a) Small Package with height of 5 mm, and volume of 2.5 cubic cm; (b) Use 7 micron core, loose tube, SM fiber for tight bend radius; (c) Responsivity>0.7 A/W… More