InGaAs / InP Based Multi-level Photonic Modules for Millimeter Wave Phased Array Antennas
Agency / Branch:
DOD / ARMY
The goal of the proposed development is the creation of multilevel photonic modules comprised of monolithic, InGaAs / InP p-i-n photodetector - p-HEMT power amplifier, Opto-electronic integrated circuit (OEIC), that has 60 GHz bandwidth and output power of 100 mW. The photodetector will have a high quantum efficiency (30%) and will be front-illuminated, thereby improving optical performance. The proposed innovation will greatly simplify the implementation of miniaturized optically controlled antenna elements. By integrating the photoreceiver and power amplifier into one OEIC device, the antenna element can be made to resemble a ceramic chip carrier. The element would have two ceramic substrates sandwiching the InP chip, one carrying the fiber input and the other carrying the antenna output. The overall element would be small, rugged, and hermetic, allowing for conformal mounting onto vehicle structures and other such applications. Dr. Arthur Paolella of Lockheed Martin's Communication & Power Center will consult. BENEFITS: Optical signal distribution for phased array antennas in communication satellites is advantageous to system designers. By distributing the microwave and millimeter wave signals optically, a potential savings of up to 100 lbs can be achieved. This weight saving translates into reduced launch costs of $1.5 to $3.0 M per satellite.
Small Business Information at Submission:
Principal Investigator:Abhay M. Joshi
DISCOVERY SEMICONDUCTORS, INC.
186 Princeton-hightstown Road, Bldg, 3a, Box 1 Cranbury, NJ 08512
Number of Employees: