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Ultra-fast, High Saturation Current, InGaAs/InP Photodetectors

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
74364
Program Year/Program:
2007 / STTR
Agency Tracking Number:
05ST1-0074
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Discovery Semiconductors, Inc.
119 Silvia Street Ewing, NJ -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2007
Title: Ultra-fast, High Saturation Current, InGaAs/InP Photodetectors
Agency / Branch: DOD / DARPA
Contract: W31P4Q-07-C-0027
Award Amount: $750,000.00
 

Abstract:

In Phase II, we propose to develop high saturation current photodiodes that will meet the following design criteria: (a) Responsivity > 0.65 A/W, (b) 1 dB compression current > 100 mA, (c) Bandwidth DC to 18 GHz,(d) Wavelength response of 1300 to 1550 nm, and (e) OIP3 of +50 dBm. Three different photodiode designs will be tested for maximum saturation current: Partially Depleted Absorber (PDA), Dual-depletion Region (DDR), and Charge Compensated Uni Traveling Carrier (CC UTC). A comparative study of these three designs will determine which structure is more suitable for the above design goals. As saturation current levels increase above 100 mA, the problem of excessive Joule heating (multiple of voltage bias and photodiode current) creates the problem of "thermal runaway" leading to eventual device failure. We will investigate "wafer bonding" of InGaAs photodiodes to silicon wafers for better heat removal caused by Joule heating. This will ultimately lead to a more reliable photodiode. Additionally, both single and doublet Graded Index (GRIN) lenses will be used for optical beam shaping to convert a Gaussian beam to a flattop beam. This will help us achieve the above listed five goals.

Principal Investigator:

Abhay Joshi
President and CEO
6094341311
Abhay@chipsat.com

Business Contact:

Abhay Joshi
President and CEO
6094341311
Abhay@chipsat.com
Small Business Information at Submission:

DISCOVERY SEMICONDUCTORS, INC.
119 Silvia Street Ewing, NJ 08628

EIN/Tax ID: 223140182
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
UNIV. OF VIRGINIA
Office of Sponsored Programs 1001 North
Charlottesville, VA 22904
Contact: Campbell
Contact Phone: (434) 243-2068
RI Type: Nonprofit college or university