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Low Noise, InGaAs Dual Photodiodes for Precise Timing

Award Information

Agency:
Department of Commerce
Branch:
National Institute of Standards and Technology
Award ID:
84351
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
428-08
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Discovery Semiconductors, Inc.
119 Silvia Street Ewing, NJ 08628-
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2009
Title: Low Noise, InGaAs Dual Photodiodes for Precise Timing
Agency / Branch: DOC / NIST
Contract: N/A
Award Amount: $300,000.00
 

Abstract:

Conversion of highly stable optical clocks into electrical clocks through photodetection introduces excess phase noise, thereby degrading the frequency stability. This noise is primarily generated due to the conversion of optical intensity noise into electrical phase noise by photodiode┬┐s non-linearity, specifically power-to-phase conversion. During Phase I, Discovery developed dual photodiodes having a power-to-phase conversion of 3 rad/W at 1550 nm and 900 nm wavelengths simultaneously, which presents a 10 fold improvement in state-of-the-art. During Phase 2, Discovery will optimize the photodiode structure in order to improve its responsivity at 900 nm by a factor of two, while ensuring a 3 dB bandwidth of 18 GHz and power-to-phase conversion of 3 rad/W. This will correspond to a 6 dB improvement in excess phase noise as compared to the Phase 1 photodiodes.

Principal Investigator:

Business Contact:

Small Business Information at Submission:

Discovery Semiconductors, Inc.
119 Silvia St. Ewing, NJ 08628

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No