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PHOTOELECTROCHEMICAL FABRICATION OF SPECTROSCOPIC DIFFRACTION GRATING IN…

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
6697
Program Year/Program:
1988 / SBIR
Agency Tracking Number:
6697
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
EIC LABORATORIES, INC.
111 DOWNEY ST NORWOOD, MA 02062-
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1988
Title: PHOTOELECTROCHEMICAL FABRICATION OF SPECTROSCOPIC DIFFRACTION GRATING IN SILICON CARBIDE
Agency: NASA
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

GRATINGS AND OPTICAL COMPONENTS THAT OPERATE IN THE VACUUM ULTRAVIOLET (VUV) AND THE X-RAY REGION ARE IMPORTANT COMPONENTS OF SPECTROSCOPIC INSTRUMENTATION FOR MANY OF NASA'S SPACE MISSIONS (E.G., LYMAN). SILICON CARBIDE (SIC) POSSESSES THE REQUIREMENTS OF HIGH REFLECTIVITY, LOW SCATTERING, HIGH STIFFNESS AND LOW THERMAL STRESS FOR AN OPTICAL MATERIAL IN THIS REGION. PHOTOELECTROCHEMICAL ETCHING IS A PROCESS FOR PRODUCING DIFFRACTION GRATINGS DIRECTLY IN SEMICONDUCTING MATERIALS, SUCH AS SIC. IN PRINCIPLE, THE PROCESS HAS MOLECULAR LEVEL OF RESOLUTION, AND SHALLOW INTERFERENCE GRATINGS CAN BE PHOTOELECTROCHEMICALLY ETCHED WITH PERIODS EXCEEDING 6000 GROOVES/MM. PHASE I ENTAILS THE DEMONSTRATION OF THE FEASIBILITY OF MAKING DIFFRACTION GRATINGS IN SIC BY PHOTON INDUCED ETCHING. EFFECTS OF ETCHANT COMPOSITION, WAVELENGTH, EXTERNAL ELECTRICAL BIAS, TOTAL EXPOSURE AND SURFACE MORPHOLOGY WILL BE EXAMINED IN RELATION TO THE PHOTOELECTROCHEMICAL ETCHING OF SIC.

Principal Investigator:

Dr michael m carrabba

Business Contact:

Small Business Information at Submission:

Eic Laboratories Inc
111 Downey St Norwood, MA 02062

EIN/Tax ID: 042497074
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No