The molecular beam epitaxy (mbe) has the promise of growing high purity hgcdte (hct) material (one of the most importantinfrared detector material today) capable of resolving current problems of high noise and high non-uniformity in the detector arrays. performing the mbe growth of hct in space by… More

An innovative approach to produce multi-megarad hard electronic devices for spaceborne applications has been proposed, whereby junction field effect transistors (jfet) are developed using silicon-oninsulator (soi) technology. the multimegarad hardness is derived from the 'buried' channel of the jfet… More

The proposed program is the development of a unique technique by which a large mosaic array of single-crystalline silicon resistors, each suspended across a hollow cavity, isfabricated using conventional integrated circuit (ic) tech nology. each resistor, heated rent is controlled by a… More

A passively-cooled detector array technology in the mid wavelength infrared (mwir) region is being sought for spaceborne surveillance applications. we have proposed to use the molecular beam epitaxy (mbe) technology to fabricate high-quality insb material and highdetectivity detector arrays. the… More

The development of the silicon resistor array technology has been proposed to fabricate an ir (infrared) air target simulator specifically for simulating, testing and modeling of seeker-to-target range closure conditions. each resistor heated by a passage of current acts as a blackbody radiator, and… More

Epitaxial growth of multilayers of (hgte)x(insb)1-x on silicon-onsapphire (sos) substrates by molecular beam epitaxy (mbe) has been proposed. the mbe technique can produce high-quality multiepilayers of (hgte)x(insb)1-x with different x values, which will give rise to different cutoff wavelengths in… More

A proposal is made on an innovative approach to perform epitaxial growth of high-quality hgcdte(hct) material on silicon (si) substrates by molecular beam epitaxy (mbe). by using si substrate, a large surface area of hct epitaxial layer can be made resulting in a potentially cost-effective method of… More

A proposal is made to develop strained superlattice (ssl) structure of inas(1-x)sb(x) by molecular beam epitaxy (mbe) for fabricating long wavelength infrared (lwir) detectors. a special buffered substrate will be used for the inas(1-x)sb(x) epitaxy, aimed at achieving uniform epi layer having a… More

Epitaxial growth of thin layers of pbs(x)se(1-x) on baf(2) substrate by molecular beam epitaxy (mbe) has been proposed. the mbe technique can produce high-quality multilayers of pbs(x)se(1-x) with different x values, which will give rise to different cutoff wavelengths in the infrared spectral… More

This effort will investigate the controlled epitaxy of ultra-thin, alternating layers of cuo and bisrcao on a buffered si substrate, forming an ultrastructure approximating closely the multilayered structure of the bisrcacuo superconductor. the high-quality and high-rate of epitaxial growth is… More

Many advanced microcircuits used in military systems have to be high speed, low noise and radiation hard, particularly radiation hard against neutron irradiation. a proposal is made for the development of an innovative technology for fabricating v-grooved junction-field-effect transistor (vjfet) and… More

Midcourse surveillance and missile surveillance systems require long wavelength infrared (lwir) and medium wavelength infrared (mwir) detector arrays, repectively. current irreproducibility of hgcdte tech-nology for the lwir spectral region has forced a reappraisal of developing inassb as an… More

Many microelectronic circuits used in high-performance infrared systems are required to operate at cryogenic temperatures and be low noise at the same time. these applications demand innovations. the development of a new and innovative technology for insb junction-field-effect transistor (jfet)… More

An innovative approach is proposed for fabricating series-connected multiple vertical p-n junctions on silicon by molecular beam epitaxy (mbe) for converting high intensity (1x10(3)w/cm(2)) laser to electrical power in space-based laser power stations. this approach involves precisely controling the… More

A proposal is made to develop high-performance insb detectorarrays by molecular beam epitaxy (mbe) on gaas. this effortwill first develop two strained superlattices (ssl) in tandem for a near-perfect lattice match between the insb and gaas, and then fabricate the p-n junctions for the 3-5 micron… More

Advanced night sight target sensors used in tactical weapons for fire control require detector arrays that are low weight, low power and can be operated at room temperature with reasonable sensitivity. to meet these requirements, an innovative technique is proposed for fabricating large-area long… More

A need exists for an infrared (ir) imaging spectrometer that measures simultaneously spatial as well as spectral distributions of ir targets, for target recognition and discrimination against clutter or decoys. recent advances in semiconductor bandgap engineering by molecular beam epitaxy (mbe) have… More

This effort will investigate the controlled molecular beam epitaxy (mbe) of thin film bisrcacuo on a buffered si substrate. the epitaxy, aimed at in-situ control of stoichiometry, will be carried out by using a beam of atomic oxygen generated by a electroncyclotron-resonance (ecr) source reacting… More

The recent advances in bandgap engineering by molecular beam epitaxy (mbe) have produced a strained superlattice (ssl) of insb/inassb capable of being made into photodiodes tailorable to any spectral reponse within the infrared spectrum (1-16 micron). to exploit these advances, this proposal is made… More

We propose the development of a programmable ultra-violet (uv) dynamic scene generator (uvdsg) tailored to perform hardware-inthe-loop (hil) simulation of uv sensors used in military systems. we will investigate a special process for fabricating a 2-dimensional array of microscopic, deformable… More

Recent successes of molecular beam epitaxy (mbe) have demonstrated growth of new electronic materials and infrared detectors with exceptional or greatly improved properties. in particular, mbe can produce a superlattice schottky barrier with controlled bandgap and ultra-thin epilayers to detect long… More

Bandgap engineering by molecular beam epitaxy (mbe) is not only capable of producing a strained superlattice (ssl) of insb/inas(1-x)sb(x) for longwavelength infrared (lwir, 8-12 micron) detectors, but is also capable of processing the detectors into a monolithic array. we will develop the mbe… More

We propose a new approach to long wavelength infrared (lwir) imaging arrays using superlattice schottky barrier (sb) photodiodes grown by molecular beam epitaxy (mbe) on silicon (si). thesuperlattice sb photodiodes are processed with readout electronics onthe si forming a monolithic array. we will… More

We propose to develop a low-cost technique for uav automatic landing, using a high-density array of surface emitting lasers (sel) for active imaging of runway and active computing of range. we will develop the sel array using ingaas/gaas multiple quantum wells (mqws) sandwiched between two… More

Electro-optek proposes to develop a novel and innovative method of fabricating large-area long wavelength infrared (lwir) detector arrays that can operate at room temperature. this technique uses established technologies of micro-machining and microelectronic processing of silicon (si) wafers for… More

We propose to develop a multispectral infrared (ir) imaging system using algaas/gaas multiple quantum wells (mqw) focal plane arrays (fpas) for detecting radiation in multiple spectral bands. the detector structure comprises a vertical stack of two (or more) different periodicity of mqws: one… More

The recent advances in bandgap engineering by molecular beam epitaxy (mbe) have produced a strained superlattice (ssl) of insb/ina -xsbx capable of being made into photodiode detectors suitable for the long wavelength infrared (lwir, 8-14 micron) spectral range. this proposal is made to develop the… More

Conventional two-dimensioanl integrated circuits despite their conspicuous progress in submicron domain have almost reached their limits in packing density. one way to achieve a high level of integration is to stack the circuit layers vertically to result in a three-dimensioanl chip system… More

Electro-Optek proposes to fabricate ultra radiation hard, high-sensitivity, long wavelength infrared focal plane arrays using IrSi3/Si Schottky Barrier (SB) infrared detectors grown by molecular beam epitaxy on silicon-on-insulator substrates. The SB photodiodes of Iriduim siliconide/Si, are… More

We propose to develop a novel and innovative method of fabricating large-area long wavelength infrared (lwir) detector arrays that can be operted at room temperature for far infrared active glint return tracking. this technique uses established technologies of micro-machining and microelectronic… More

Electro-optek proposes to develop an innovative large-area, long wavelength infrared (lwir) detector array that can operate at room as well as cryogenic temperatures, and is extremely radiation hard. the fabrication of the array uses established technologies of micro-macchining and microelectronic… More

We propose to develop a laser detection and ranging (ladar) technique for airborne target detection and tracking at ranges of 10 km or greater. we will develop the sel array using ingaas/gaas multiple quantum wells (mqws) sandwiched between two distributed bragg reflectors (dbr) of gaas/alas. the… More

We propose to develop ultra fast lsi/vlsi cmos circuits using si1-xgex channel pmos and si channel nmos devices integrated on the same chip suitable for strategic defense systems. since the mobility of the pmos sige channel devices atleast by 50% the cmos circuits will have higher packing density… More

We propose to develop ultra radiation-hard complementary heterojunction bipolar transistor (chbt) circuits for high frequency applications suitable for dense spaceborne systems. we will develop a self-aligned base ohmic metal (sabm) process with thin base structures to achieve very high cut-off… More

Electro-Optek will develop a sensor-fusion infrared (IR) + millimeterwave (MMW) imaging focal plane array combining electron tunneling and silicon micromachining. A gas encapsulated in a cavity micromachined on Si expands upon absorption of IR radiation, like a Golay detector, causing a deflection… More

1This proposal is to develop an architecture for neural optical computing using a high-density array of surface emitting lasers (SEL), fabricated with InGaAs/GaAs multiple quantum wells (MQW) sandwiched between two distributed Bragg reflectors (DBR) of GaAs/AlAs. The MQW and DBR will be fabricated… More

Electro-Optek proposes to develop a radiation-hard, non-volatile random access memory using an epitaxial InSb Hall element fabricated on gallium arsenide (GaAs) in conjunction with a thin-film layer of permalloy. The permalloy layer serves as the non-volatile memory storage medium while the InSb… More

We propose to develop a dual-mode sensor for positive all-weather identification of friendly vehicles in combat using 2-dimensional arrays of All-xGaxAs multiple quantum wells (MQWs) for detection long-wavelength infrared (LWIR) radiation and 2-dimensional arrays of 94-GHz millimeter wave (MMW)… More

Resarchers are developing a novel and innovative method to fabricate large-area, long wavelength infrared (lwir) detector arrays that can be operated at room as well as cryogenic temperatures. the technique is using established technologies of micro-machining and microelectronic processing of… More